Stability and Electronic Properties of GaN Nanowires—An Ab-Initio Approach
Four different thin nanowires of gallium nitride were studied by pseudopotential density functional electronic structure calculation using the generalized gradient approximations. The different structures were two atom linear wire, two atom zigzag wire, four atom square wire and six atom hexagonal wire. The geometry and the stability of all nanowires were investigated. We have also investigated the density of states and band structure of nanowires. We predict that four atom square wire cross section have greater stability in comparison to other structures and thus energetically more favorable.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
Document Type: Research Article
Publication date: 2008-04-01
More about this publication?
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
- Editorial Board
- Information for Authors
- Submit a Paper
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites