An Atomistic Simulation Study of Carbon Nanotube Electromechanical Memory
A nanoelectromechanical memory device of carbon-nanotube-bridge was investigated by atomistic simulations based on empirical potentials. The carbon-nanotube-bridge nanoelectromechanical memory was operated under the electrostatic, the elastostatic, and the van der Waals forces. For the carbon-nanotube-bridge nanoelectromechanical memory, the electrical-induced potential energy was changed to the mechanical energy and the van der Waals interactions between the carbon-nanotube-bridge and the oxide were very important. As the distance between the carbon-nanotube-bridge and the oxide decreased and the van der Waals interaction energy increased, the pull-in bias of the carbon-nanotube-bridge decreased and the nonvolatility of the nanoelectromechanical memory device increased while the pull-out voltages increased. In order that the nanoelectromechanical memory could be worked as a nonvolatile memory, the oxide materials should be carefully selected.
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Document Type: Research Article
Publication date: 01 September 2005
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- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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