Analysis of Processes of Mass and Heat Transport During Gas Phase Epitaxy of a Semiconductor Structures with Rotating Disk Substrate Holder in a Horizontal Reactor
In this paper we analyzed convective diffusion processes in vertical and horizontal reaction chambers for epitaxy from gas phase with disk substrate holder with atmosphere and low (∼0.1 atmosphere) pressure. We introduce an analytical approach to solve equations of convective diffusion.
We apply the obtained results for MOCVD of gallium arsenide. Epitaxy MOCVD is a modern method for manufacture of nanoscale semiconductor structures: quantum pits; arrays of quantum pits; structures with two-dimensional electronic gas.
Keywords: CONVECTION DIFFUSION MODEL; GAS PHASE EPITAXY; SEMICONDUCTOR LAYER
Document Type: Research Article
Publication date: 01 April 2017
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