Thin Film Materials Characterization Using TE Modes Cavity

Authors: Le Floch, J.M.¹; Houndonougbo, F.²; Madrangeas, V.²; Cros, D.²; Guilloux-Viry, M.³; Peng, W.³

Source: Journal of Electromagnetic Waves and Applications, Volume 23, Number 4, 2009 , pp. 549-559(11)

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Abstract:

This paper presents the characterization of thin film dielectric materials, labeled as LW 51 KTN and LW 48 KTN. The technique can be applied for lower temperatures. We briefly present the material process of both thin films, then the dielectric characterization using a conventional TE mode cavity method [1-5] with the help of a rigorous simulation software based on the method of lines [6]. We finally measured high permittivity and low loss-tangent materials within the microwave frequency range from 12 to 15 GHz.

Document Type: Research article

DOI: http://dx.doi.org/10.1163/156939309787612293

Affiliations: 1: School of Physics, University of Western Australia, 35 Stirling Hwy, Crawley, Western Australia, XLIM, UMR CNRS No. 6172-123, Avenue A. Thomas, Limoges Cedex 87060, France;, Email: lefloch@cyllene.uwa.edu.au 2: XLIM, UMR CNRS No. 6172-123, Avenue A. Thomas, Limoges Cedex 87060, France 3: Unité Sciences Chimiques de Rennes, UMR 6226 CNRS, Université de Rennes 1, Campus de Beaulieu, Rennes Cedex 35042, France

Publication date: 2009-02-01