Low-Voltage Low-Power CMOS RF Four-Quadrant Multiplier
This paper describes a CMOS four-quadrant multiplier intended for use in the front-end receiver by utilizing the square-law characteristic of the MOS transistor in the saturation region. The circuit was simulated in standard 0.5 μm CMOS level 3 MOSIS (BSIM3 SPICE-based). The mixer has a third-order inter modulation (IM3) of 34.7 dBmV, a third-order intercept point (IP3) of -5.7 dBm, 1-dB compression (P-1dB) of -10.4 dBm and the power consumption is 1.18 mW from a single 1.5 V power supply. One of the features of the proposed design is using two MOS transistors limitation to reduce the supply voltage, which leads to reduce the power consumption.
Document Type: Miscellaneous
Affiliations: Faculty of Engineering, Electronics and Communication Engineering Department, Cairo University, Cairo, Egypt. Fax: +202-5723486, E-mail: firstname.lastname@example.org
Publication date: 2003-01-01