Simulation of Saturation Effects in Electroabsorption Modulators

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Abstract:

Saturation phenomena have a deep impact on the performance of electroabsorption (EA) modulators. It is important to develop algorithms which as well describe the phenomenon of electroabsorption as they include nonlinear carrier dependent effects, band filling and reduction of the band gap. Thus, a dynamical transport model has to be coupled to the density matrix equation for excitons.

The density matrix equation for interband processes determines quantum optical effects, while a drift-diffusion model (DDM) adequately describes transport phenomena in the device. Within this approach quantum transport is considered by a correction of the classical potential, the Bohm potential.

To demonstrate the presented algorithm, waveguide EA-modulators including strained lattice and full Fermi statistics are investigated.

Keywords: Dynamical solutions; Electroabsorption modulator; Quantum wells; Saturation

Document Type: Original Article

DOI: http://dx.doi.org/10.1078/14348410122267627

Affiliations: 1: Lehrstuhl für Hochfrequenztechnik, Universität Dortmund, Otto-Hahn-Str. 6, 44227 Dortmund, Germany. E-mail: schulz@hft.e-technik.uni-dortmund.de 2: RF Design, R&D Center Bochum, Nokia GmbH, Meesmannstr. 103, 44807 Bochum, Germany.

Publication date: October 1, 2001

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