Surface roughness measurement of semi-conductor wafers using a modified total integrated scattering model
Abstract:Light scattering is a non-contact technique which can be used for characterizing the topography of smooth reflecting surfaces. A proposed technique which incorporates a modified Total Integrated Scattering (TIS) model for surface roughness measurement of semi-conductor wafers has been developed. The technique employs a low power He-Ne laser and incorporates conventional optical components to record surface roughness in the nanometer range (R a < 45 nm) with a high degree of accuracy. Principle of the technique and the experimental arrangement are described. Results obtained using the proposed technique are compared with those using the conventional direct contact method.
Document Type: Original Article
Affiliations: Department of Mechanical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Publication date: 2002-09-01