Transient-Enhanced Diffusion in Shallow-Junction Formation

Authors: Fiory A.T.; Chawda S.G.; Madishetty S.; Mehta V.R.; Ravindra N.M.; McCoy S.P.; Lefrançois M.E.; Bourdelle K.K.; McKinley J.M.; Gossmann H.-J.L.; Agarwal A.

Source: Journal of Electronic Materials, Volume 31, Number 10, 1 October 2002 , pp. 999-1003(5)

Publisher: Minerals, Metals & Materials Society

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Abstract:

Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

Keywords: ION IMPLANTATION; SPIKE ANNEALING; ELECTRICAL ACTIVATION

Document Type: Research article

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