Shallow Junction Formation on p-like CdTe Crystals by Indium Diffusion Using Excimer Laser Annealing

Authors: Niraula M.; Nakamura A.; Aoki T.; Tatsuoka H.; Hatanaka Y.

Source: Journal of Electronic Materials, Volume 30, Number 8, 1 August 2001 , pp. 911-916(6)

Publisher: Minerals, Metals & Materials Society

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Abstract:

Excimer laser annealing has been investigated to form a shallow junction on p-like CdTe crystals by indium diffusion. By evaporating a thin layer of indium on the CdTe crystals in a physical vapor deposition system without heating the crystals, and then irradiating them with an excimer laser, we could produce a highly conductive thin surface layer on the crystal. These layers showed n-type conductivity in Hall measurements, and an increase on the donor-acceptor pair band, possibly due to indium incorporation, was also observed in the photoluminescent spectrum. The best value of resistivity, carrier concentration and electron mobility of the layer thus obtained was 5 × 10-3 Omegacm, 9 × 1018 cm-3, and 138 cm2/Vs, respectively. The carrier transport properties of the shallow p-n junction formed were then investigated by means of current-voltage measurements at different temperatures. Furthermore, applicability of this junction in a gamma-ray detector was also investigated.

Keywords: CDTE; INDIUM DIFFUSION; EXCIMER LASER ANNEALING; SHALLOW JUNCTION; RADIATION; DETECTOR

Document Type: Research article

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