Authors: Vashaee, Daryoosh¹; Christofferson, James¹; Zhang, Yan¹; Shakouri, Ali¹; Zeng, Gehong²; LaBounty, Chris²; Fan, Xiaofeng²; Piprek, Joachim²; Bowers, John²; Croke, Edward³

Source: Microscale Thermophysical Engineering, Volume 9, Number 1, January-March 2005 , pp. 99-118(20)

Publisher: Taylor and Francis Ltd

Abstract:

Modeling and optimization of bulk SiGe thin-film coolers are described. Thin-film coolers can provide large cooling power densities compared to commercial thermoelectrics. Thin-film SiGe coolers have been demonstrated with maximum cooling of 4°C at room temperature and with cooling power density exceeding 500 W/cm 2 . Important parameters in the design of such coolers are investigated theoretically and are compared with experimental data. Thermoelectric cooling, joule heating, and heat conduction are included in the model as well as non-ideal effects such as contact resistance, geometrical effects, and three-dimensional thermal and electrical spreading resistance of the substrate. Simulations exhibit good agreement with experimental results for bulk Si and SiGe thin-film coolers. It turned out that in many spot cooling applications using two n - and p -elements electrically in series and thermally in parallel does not give significant improvement over single leg elements. This is in contrast to conventional thermoelectric modules and is due to the aspect ratio and special geometry of thin film coolers. With optimization of SiGe thin-film cooler, simulations predict it can provide over 16°C with cooling power density of over 2000 W/cm 2 .

Document Type: Research article

DOI: http://dx.doi.org/10.1080/10893950590913459

Affiliations: 1: Baskin School of Engineering, University of California, Santa Cruz, California, USA 2: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, USA 3: HRL Laboratories, LLC, Malibu, California, USA

Publication date: 2005-01-01

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