Authors: Phinney L. M.; Fushinobu K.; Tien C-L.

Source: Microscale Thermophysical Engineering, Volume 4, Number 1, 1 January 2000 , pp. 61-75(15)

Publisher: Taylor and Francis Ltd

Abstract:

Ultrashort-pulse lasers are able to recover stiction-failed microelectromechanical systems (MEMS) structures. A possible physical mechanism for this process is an electronic disruption of the bonding between the structure and the substrate, which depends strongly on the peak carrier temperatures. This article presents predicted carrier temperatures for polycrystalline silicon microcantilevers irradiated with ultrashort-pulse lasers. The effects of increased carrier-phonon coupling, reduced thermal conductivity, and increased absorption for polycrystalline silicon as compared to crystalline silicon are determined. An expression for the optimal absorption coefficient is derived for processes in which the excitation is desired at a specified depth into the material.

Language: English

Document Type: Research article

Publication date: 2000-01-01

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