Generation of Bright Femtosecond Pulse by Utilizing Nonlinear Process in Silicon-on-Insulator Waveguides

Authors: Wu, Jianwei¹; Luo, Fengguang²; Cao, Mingcui²

Source: Fiber And Integrated Optics, Volume 28, Number 3, May 2009 , pp. 237-247(11)

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Abstract:

A project of bright femtosecond pulse generation has been presented and investigated in silicon-on-insulator optical waveguides by utilizing the nonlinear process that includes the stimulated Raman scattering, non-degenerate two-photon absorption, and cross-phase modulation. It can be described that, when a continuous-wave and an ultrafast dark pulse are co-propagating in silicon waveguide, the continuous wave will be modulated inversely by the dark pulse during the propagation. As a consequence, the bright pulse with pulsewidth (full width at half-maximum) of only several tens of femtosecond can be achieved. Moreover, the properties of generated bright femtosecond pulse are strongly dependent on the input power, waveguide length, and dark pulsewidth.

Keywords: femtosecond pulse generation; integrated optics; nonlinear process; silicon-on-insulator technology

Document Type: Research article

DOI: http://dx.doi.org/10.1080/01468030802478610

Affiliations: 1: College of Optoelectronic Engineering and the Key Laboratory for Optoelectronics Technology and Systems of Education Ministry, Chongqing University, Chongqing, P. R. China 2: College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan, P. R. China,Wuhan National Laboratory for Optoelectronics, Wuhan, P. R. China

Publication date: 2009-05-01

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