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Publisher: Taylor and Francis Ltd

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Volume 81, Number 10, 1 October 2001

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Growth of niobium nitride/aluminium nitride trilayers and multilayers
pp. 2317-2335(19)
Authors: Lloyd, S. J.; Tricker, D. M.; Barber, Z. H.; Blamire, M. G.

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A comparative study of precipitate composition and volume fraction in an Al–Zn–Mg alloy using tomographic atom probe and small-angle X-ray scattering
pp. 2391-2414(24)
Authors: Deschamps, A.; Bigot, A.; Livet, F.; Auger, P.; Bréchet, Y.; Blavette, D.

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An extended Cahn–Hilliard model for interfaces with cubic anisotropy
pp. 2457-2479(23)
Authors: Abinandanan, T. A.; Haider, F.

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Strain relaxation and dislocation introduction in lattice-mismatched InAs/GaP heteroepitaxy
pp. 2481-2501(21)
Authors: Gopal, V.; Vasiliev, A. L.; Kvam, E. P.

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Reaction kinetics of glissile interstitial clusters in a crystal containing voids and dislocations
pp. 2515-2532(18)
Authors: Barashev, A. V.; Golubov, S. I.; Trinkaus, H.

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On recoil-energy-dependent defect accumulation in pure copper Part II. Theoretical treatment
pp. 2533-2552(20)
Authors: Golubov, S. I.; Singh, B. N.; Trinkaus, H.

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