Skip to main content

On transition temperatures in the plasticity and fracture of semiconductors

Buy Article:

$63.00 plus tax (Refund Policy)

Recent experiments on deformation of semiconductors show an abrupt change in the variation in the critical resolved shear stress Y with temperature T. This implies a change in the deformation mechanism at a critical temperature Tc. In the cases examined so far in our laboratories (Case Western Reserve University and Poitiers) and elsewhere, this critical temperature appears to coincide approximately with the brittle-to-ductile transition temperature TBDT. In this paper, new deformation experiments performed on the wide-bandgap semiconductor 4H-SiC over a range of temperatures at two strain rates are described together with a transmission electron microscopy characterization of induced dislocations below and above Tc. Based on these, and results recently reported on a few III-V compound semiconductors, a new model for the deformation of tetrahedrally coordinated materials at low and high temperatures is proposed, and the relation of the transition in deformation mode to the transition in fracture mode (brittle to ductile) is discussed.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Data/Media
No Metrics

Document Type: Research Article

Publication date: 2001-05-01

More about this publication?
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more