Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

Authors: Winkelman, G. B.¹; Dwyer, C.¹; Hudson, T. S.¹; Nguyen-Manh, D.¹; Döblinger, M.¹; Satet, R. L.²; Hoffmann, M. J.²; Cockayne, D. J. H.¹

Source: Philosophical Magazine Letters, Volume 84, Number 12, December 2004 , pp. 755-762(8)

Publisher: Taylor and Francis Ltd

Buy & download fulltext article:

Price: $56.94 plus tax (Refund Policy)

Abstract:

The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

Document Type: Research article

DOI: http://dx.doi.org/10.1080/09500830500041302

Affiliations: 1: Department of Materials, University of Oxford, Oxford OX1 3PH, UK 2: Institut für Keramik im Maschinenbau, Universität Karlsruhe, D-76131 Karlsruhe, Germany

Publication date: 2004-12-01

More about this publication?