Polycrystalline silicon deposited on glass by subatmospheric-pressure chemical vapour deposition at a high rate

In this: publication
By this: publisher
In this Subject: Nuclear Physics
By this author: M&uuml;nster P. ;&nbsp; Sarret M. ;&nbsp; Mohammed-Brahim T. ;&nbsp; Coulon N. ;&nbsp; Mevellec J-Y.

Authors: Münster P.; Sarret M.; Mohammed-Brahim T.; Coulon N.; Mevellec J-Y.

Source: Philosophical Magazine B, Volume 82, Number 15, 1 October 2002 , pp. 1695-1701(7)

Buy & download fulltext article:

Price: $56.94 plus tax (Refund Policy)

Abstract:

Amorphous silicon films have been deposited on glass by subatmosphericpressure chemical vapour deposition and then crystallized by solid-phase crystallization. The structural and electrical properties of these polycrystalline silicon films are presented in this work. Good crystalline quality at a deposition pressure of about 400 mbar has been achieved as well as values of the mobility- lifetime product above 10^- cm²V^-1 and an ambipolar diffusion length near 200 nm. Depending upon the deposition temperature and pressure, growth rates of up to 20 µm h^-1 can be obtained. In-situ doping with arsenic and boron has been studied using Hall effect measurements. High mobilities around 45 cm²V^-1s^-1 have been attained for highly n-type doped samples and mobilities in the range from 20 to 30 cm²V^-1s^-1 for boron-doped samples.

Document Type: Research article

Publication date: 2002-10-01

More about this publication?