Philosophical Magazine B

An approximate calculation for transport in magnetic tunnel junctions in the presence of localized states
pp. 763-769(7)
Authors: Levy P. M.; Wang K.; Dederichs P. H.; Heide C.; Zhang S.; Szunyogh L.

Universality of the intermediate phase and high-temperature superconductivity in C₆₀
pp. 771-782(12)
Author: Phillips J. C.

Percolative model of nanoscale phase separation in high-temperature superconductors
pp. 783-790(8)
Author: Phillips J. C.

Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons
pp. 791-800(10)
Authors: Zaoui A.; Hassan F.E.H.

High-field properties of single-crystal CaVO₃
pp. 801-804(4)
Authors: Jung M. H.; Inoue I. H.; Nakotte H.; Lacerda A. H.

Magnetotransport of compounds in the U–Ge system
pp. 805-824(20)
Authors: Tro R.; Noël H.; Boulet P.

Elastic and thermodynamic properties of the shape-memory alloy AuZn
pp. 825-837(13)
Authors: Darling T. W.; Chu F.; Migliori A.; Thoma D. J.; Lopez M.; Lashley J. C.; Lang B. E.; Boerio-Goates J.; F.Woodfield B.

The Hubbard model, spin degeneracy and Ising spins
pp. 839-853(15)
Author: Ziegler K.

Excitonic contribution to photoluminescence in amorphous semiconductors
pp. 855-871(17)
Authors: Singh J.; Aoki T.; Shimakawa K.

Erratum: Interfaces between lanthanum hexaaluminate and sapphire studied by high-resolution electron microscopy
pp. 873-874(2)
Authors: Wessler B.; W.Mader A.S.