Low-temperature resistivity and thermoelectric power controlled by defects in the USb antiferromagnet
Authors: Wawryk R.; Henkie Z.
Source: Philosophical Magazine B, Volume 81, Number 2, 1 February 2001 , pp. 223-234(12)
Publisher: Taylor and Francis Ltd
Abstract:
The resistivity
(T), magnetoresistivity, magnetization and thermoelectric power S(T) of several USb crystals have been examined in the temperature range 0.03-300 K, in magnetic fields up to 14 T. The resistivity ratio (RR)(
(300 K)/
(4.2 K)) of examined crystals ranged from 1.6 to 13. It was found that defects, which decrease the RR, contribute both to
(T) in the shape of a temperature dependent Kondo-like component and to S(T) by means of a peak-like component. The
(T) curve shows a maximum below 2K and a minimum between 8 and 14K, depending on the RR. S(T) reaches a maximum at 40 K, which is as large as 40
V K-1 for the sample with RR = 13. The low-temperature
(T) behaviour indicates a Kondo temperature of 37 K, fairly close to the temperature of the S(T) maximum. The origin of the Kondo-like behaviour of the resistivity and the thermoelectric power of USb crystals at low temperatures is discussed.
Language: English
Document Type: Research article
Publication date: 2001-02-01
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