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Volume 80, Number 10, 11 October 2000

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The structural origin of broken chemical order in GeSe2 glass
pp. 1757-1772(16)
Authors: Boolchand P.; Bresser W.J.

The structural and superconducting properties of R1-2xCaxThxBaSrCu3O7 - delta (R=Eu or Dy; 0.0) lexle0.1)
pp. 1789-1797(9)
Authors: Waje T. B.; Gopalakrishnan I. K.; Yakhmi J. V.

On the splitting of SiH absorption bands in infrared spectra of hydrogenated microcrystalline silicon
pp. 1799-1810(12)
Authors: Stryahilev D.; Diehl F.; Schroder B.; Scheib M.; Belogorokhov A. I.

Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon
pp. 1811-1832(22)
Authors: Luterova K.; Pelant I.; Fojtik P.; Nikl M.; Gregora I.; Kocka J.; Dian J.; Valenta J.; Maly P.; Kudrna J.; Stepanek J.; Poruba A.; Horvath P.

Crystallization kinetics driven by two simultaneous modes of crystal growth
pp. 1833-1856(24)
Authors: Fontana M.; Arcondo B.; Clavaguera-Mora M. T.; Clavaguera N.

Short-range order and luminescence in amorphous silicon oxynitride
pp. 1857-1868(12)
Authors: Gritsenko V. A.; Shavalgin G.; Pundur P. A.; Wong Hei; Kwok W. M.

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