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Publisher: Taylor and Francis Ltd

Volume 15, Number 4, 1 January 2002

VLSI Design Special Issue on Semiconductor Device Modeling
pp. 679-679(1)
Author: Gardner, Carl L.

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A Comparison of Resonant Tunneling Based on Schrödinger's Equation and Quantum Hydrodynamics
pp. 695-700(6)
Authors: Abdallah, Naoufel Ben; Pinaud, Olivier; Gardner, Carl L.; Ringhofer, Christian

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Frequency Domain Kernel Estimation for 2nd-order Volterra Models Using Random Multi-tone Excitation
pp. 701-713(13)
Authors: Bicken, G.; Carey, G.F.; Stearman, R.O.

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Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1 m n-MOSFET
pp. 715-720(6)
Authors: Bufler, F.M.; Schenk, A.; Zechner, C.; Inada, N.; Asahi, Y.; Fichtner, W.

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A Comparison of Modern Hyperbolic Methods for Semiconductor Device Simulation: NTK Central Scheme Vs. CLAWPACK
pp. 721-728(8)
Authors: Gardner, Carl L.; Gelb, Anne; Hernandez, Justin

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Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP
pp. 743-750(8)
Authors: Saraniti, Marco; Hu, Yibing; Goodnick, Stephen M.

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Integration of the Density Gradient Model into a General Purpose Device Simulator
pp. 751-759(9)
Authors: Wettstein, Andreas; Penzin, Oleg; Lyumkis, Eugeny

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