Synthesis and characterization of nc-Ge embedded in SiO2/Si matrix
We have prepared germanium nanoparticles embedded in SiO2 matrix by atom beam co-sputtering (ABS) of Ge+SiO2 on Si substrate. The as-deposited films were annealed at various temperatures in Ar+H2 atmosphere and irradiated with various energies with fixed fluence. The pristine and irradiated
samples were characterized by Raman, X-ray diffraction and atomic force microscopy (AFM). Rutherford back scattering (RBS) was used to quantify the concentration of Ge in the SiO2 matrix and the film thickness. Raman studies of the films indicate the formation of Ge crystallites as a result
of swift heavy ion (SHI) irradiation. Moreover, the crystalline nature of Ge improves with an increase in energy. Glancing angle X-ray diffraction and Raman results also confirm the presence of Ge crystallites in the irradiated samples. Similarly, 400 keV Ge+ ions implanted into silicon
substrate at higher fluence at 573 K have been irradiated with 100 MeV Au8+ions at RT. These irradiated implanted samples were subsequently characterized by XRD and Raman to understand the crystallization behavior. We also studied the surface morphology of a high-energy irradiated
sample by AFM. The irradiation results were compared with those obtained by thermal annealing in ABS. The basic mechanism for crystallization induced by SHI in these films has been investigated.
Keywords: RBS; Raman spectroscopy; X-ray diffraction; implantation; irradiation; sputtering
Document Type: Research Article
Affiliations: 1: School of Physics, University of Hyderabad, Central University (PO), Hyderabad, India 2: Inter University Accelerator Centre, New Delhi, India 3: Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, India 4: CSNSM, IN2P3-CNRS, Orsay Campus, France
Publication date: 01 July 2009
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