Molecular dynamics simulation of defects production in the vicinity of voids
We report on the results of computer simulation of point defect production near voids in crystalline Cu at primary knock-on atom (PKA) kinetic energies ranging from 5 to 1000 eV. The PKA energy dependence of numbers of created defects are revealed. The threshold energy for a stable
vacancy formation is found to be much smaller than that for an interstitial atom, which results in a biased formation of vacancies in the void proximity in the whole investigated range of PKA energies. Dissolution of small voids by subthreshold irradiation is simulated. The impact of considered
radiation effects on kinetics of radiation damage is discussed.
Keywords: Focusing collisions; Molecular dynamics; Radiation damage; Voids
Document Type: Research Article
Publication date: 01 November 2003
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