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Electronic and Magnetic Properties of Ferromagnet-Semiconductor Heterostructure Systems

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The electronic and magnetic properties of ferromagnet-semiconductor (FM-SC) heterostructure systems have been studied by means of scalar-relativistic KKR-CPA band structure calculations. As a structural model for our calculations periodic multilayer systems have been assumed, taking for the ferromagnet Fe and for the semiconductor GaAs. A justification for the applicability of this geometrical model in describing the electronic and magnetic properties of the real Fe-GaAs-Fe trilayer system is given. Making use of the Coherent Potential Approximation (CPA), the influence of interdiffusion at the Fe-GaAs interface within the multilayer system has been investigated in addition. On the basis of the electronic structure calculations, the magnetic circular X-ray dichroism (MCXD) has been investigated for the L3-edges absorption spectra of Ga and As in the near-edge regime (XANES). In both cases the MCXD signal was found to be pronounced enough to be detectable and should motivate corresponding experimental studies.
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Keywords: Density functional theory; Ferromagnet-semiconductor systems; Magnetic properties

Document Type: Research Article

Affiliations: Physikalische Chemie, Universität München, Butenandtstr. 5-13, D-81377 München, Germany

Publication date: 01 April 2003

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