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Electronic Transport in Magnetic Domain-wall Structure

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The resistivity due to the domain wall in the presence of impurities in a ferromagnetic metallic wire is calculated based on the linear response theory. Assuming the local spin distribution to be spin-spiral the modification of the band structure has been obtained exactly. With this modified band structure we calculate the conductivity of the system as a function of electronic filling and show that the domain-wall contribution to the resistance can be positive or negative depending on the dimensionality, the position of the Fermi energy on the band structure and the strength of the electron local spin interaction of the system.

Keywords: Domain-wall scattering; Electrical transport in magnetic nanostructures

Document Type: Research Article

Affiliations: Theoretical Low-Temperature Physics, Gerhard-Mercator University, 47048 Duisburg, Germany

Publication date: 01 April 2003

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