DIELECTRIC AND PHASE TRANSITION PROPERTIES OF GD DOPED PbZr0.53Ti0.47O3
Abstract:PbZr0.53Ti0.47O3 (PZT53/47) doped with 0.6% wt. Gd2O3 was synthesized following the solid state reaction technique. X-ray diffraction indicated a rhombohedral structure. The grain size distribution was centered at 3 m with grains as big as 6 m. Dielectric studies in the 100 Hz to 1 MHz and the 25 to 450°C frequency and temperature ranges, yielded values above 40,000 for the relative permittivity. The transition temperature decreased from 386°C for the undoped ceramic to 352°C. Hysteresis loops were taken at 23°C and applied electric fields up to 17 kV/cm. The radial electromechanical coupling-factor was 0.12.
Document Type: Research Article
Affiliations: 1: Centro de Nanociencias y Nanotecnologia-Universidad Nacional Autonoma de Mexico, Ensenada, Baja California, Mexico,Facultad de Fisica-IMRE, Universidad de La Habana San Lazaro y L, Vedado, La Habana, Cuba 2: Centro de Nanociencias y Nanotecnologia-Universidad Nacional Autonoma de Mexico, Ensenada, Baja California, Mexico
Publication date: January 1, 2008