DUAL RF HOLLOW CATHODE PLASMA JET DEPOSITION OF BaxSr1 - x TiO3
Abstract:We have developed an rf plasma jet hollow cathode deposition process capable of depositing BaxSr1 - xTiO3 films. The films were deposited in a high vacuum plasma jet system from separate BaTiO3 and SrTiO3 nozzles. Films were deposited onto silicon substrates which were coated with platinum/TiO2/SiO2 and onto MgO substrates. The magnitude of the rf power was varied in the range of 40 to 120 W. The film composition was determined by Rutherford Backscattering where we will show the film composition can be controlled by adjusting the power supplied to each nozzle. A programmed, variable power input to one nozzle was employed in order to deposit linearly graded composition films.
Document Type: Research Article
Affiliations: 1: Department of Electrical Engineering 209N WSEC, University of Nebraska, Lincoln, NE, U. S. A. 2: U.S. Army Research Laboratory Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD, U. S. A.
Publication date: January 1, 2008