The metal-ferroelectric-metal (MFM) capacitor in ferroelectric random access memory (FeRAM) security embedded RFID chip is used not only in the memory cell region but also used in the analog and digital circuit area for low cost capacitance device and high security algorithm. MFM based security FeRAM braces for a wide range of security threats such as reverse engineering, cloning, and tampering. High security performance solution of on-chip FeRAM based register key is implemented to prepare against security attacking. RF transferring sensitivity properties with MFM capacitor are almost same or better than that with poly-insulator-poly (PIP) capacitor and metal-insulator-metal (MIM), and MOS capacitor. The measured power consumption of FeRAM embedded RFID chip without crypto processor engine is about 10 W with the write sensitivity of -18dBm.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
passive RFID tag;
Document Type: Research Article
RFID R&D, Ichon, Koera
Department of Electrical Engineering, Korea Univ., Seoul, Koera
Department of Electrical & Electronic Engineering, Kongju National Univ., Cheonan, Korea
Pohang University of Science and Technology,
School of Electronics and Information, Kyung Hee University, Korea
Publication date: 2008-01-01
More about this publication?