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The metal-ferroelectric-metal (MFM) capacitor in ferroelectric random access memory (FeRAM) security embedded RFID chip is used not only in the memory cell region but also used in the analog and digital circuit area for low cost capacitance device and high security algorithm. MFM based security FeRAM braces for a wide range of security threats such as reverse engineering, cloning, and tampering. High security performance solution of on-chip FeRAM based register key is implemented to prepare against security attacking. RF transferring sensitivity properties with MFM capacitor are almost same or better than that with poly-insulator-poly (PIP) capacitor and metal-insulator-metal (MIM), and MOS capacitor. The measured power consumption of FeRAM embedded RFID chip without crypto processor engine is about 10 W with the write sensitivity of -18dBm.

Keywords: 3-DES; DES; EEPROM; EPC; FeRAM; MFM; MIM; MRAM; PIP; PRAM; UHF; electronic fuse; passive RFID tag; security

Document Type: Research Article


Affiliations: 1: RFID R&D, Ichon, Koera 2: Department of Electrical Engineering, Korea Univ., Seoul, Koera 3: Department of Electrical & Electronic Engineering, Kongju National Univ., Cheonan, Korea 4: Pohang University of Science and Technology, 5: School of Electronics and Information, Kyung Hee University, Korea

Publication date: 2008-01-01

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