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BaTiO3-RELATED FERROELECTRIC THIN FILMS BY POLYMER ASSISTED DEPOSITION

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Abstract:

Epitaxial films of Ba1 - xSrxTiO3 (BST) and BaTi1 - xZrxO3 (BZT) have been grown using polymer assisted deposition. Lattice parameters of the BST films with different Ba/Sr ratio showed bulk like behavior, indicating that the films were relaxed. Dielectric properties of the BST films are comparable to the films grown by pulsed laser deposition. Highest dielectric tunability of 69% (at room temperature) has been obtained for Ba0.7Sr0.3TiO3 film, which is the phase boundary of the tetragonal and cubic phases. The dielectric properties of BaTi0.5Zr0.5O3 film showed relaxor like behavior.

Document Type: Research Article

DOI: http://dx.doi.org/10.1080/10584580802540645

Affiliations: 1: Department of Physics, University of Connecticut, Storrs, CT 2: Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA 3: School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu, P.R. China 4: Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA

Publication date: January 1, 2008

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