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Pb(Zr1-x,Tix)O3(PZT) thin films were prepared on 8-inch and 4-inch Pt or Ir-electroded Si wafers by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD) using cocktail sources of Pb, Zr and Ti. The processing conditions were optimized in order to obtain high-performance PZT films. The thickness uniformity of PZT films on 8-inch substrate was about ± 3.24%. The deposition rate of Pb (15.8 nm/min) and Ti (17.9 nm/min) deposited on Si substrate were faster than that of Zr (2.5 nm/min). The growth temperature of PZT film was adjusted to 570-630°C depending on the substrates used. The properties of metal/PZT/metal capacitors were also studied. The PZT films based on Pt substrate showed no good ferroelectric properties. By contrast, the ferroelectric properties of Ir/IrO2/PZT/IrO2/Ir capacitors were excellent. At an applied voltage of 5 V, the remanent polarization (Pr) and coercive field (Ec) values were about 36  C/cm2 and 50 kV/cm, respectively.
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Keywords: Lead zirconate titanate; chemical vapor deposition; electrical properties; ferroelectric thin films

Document Type: Research Article

Affiliations: Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing, 100084, P. R. China

Publication date: 01 January 2008

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