The dielectric properties of barium strontium titanate thin films with composition Ba0.6Sr0.4TiO3 were studied as a function of film thickness for implementation in a variety of devices with different requirements. Films were prepared by metalorganic solution deposition and characterized using scanning electron microscopy, atomic force microscopy, and Rutherford back-scattering. The dielectric (100 kHz) and insulating properties were also measured. The film morphology and dielectric/insulating properties are thickness dependent, yet the best combination of properties was in films of 160 nm to 240 nm. These films had a moderate dielectric constant (∼300), low loss (∼ 0.029), good tunability (∼ 30%), and low leakage current (∼ 10- 8 A/cm2).
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Document Type: Research Article
Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT, U.S.A.
Weapons and Materials Research Directorate, Materials Directorate, Active Materials Research Team, U.S. Army Research laboratory, Aberdeen Proving Ground, MD, U.S.A.
Publication date: 2008-01-01
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