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Publisher: Taylor and Francis Ltd

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Volume 81, Number 1, Volume 81/2006

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GUEST EDITORIAL
pp. vii-vii(1)
Authors: TANG, TING-AO; SOLAYAPPAN, NARAYAN; BAIK, S.; DEY, SANDWIP; AUCIELLO, O.

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NOVEL BC PLUG TECHNOLOGY FOR HIGHLY RELIABLE MASS PRODUCTIVE 0.18 μ M 1T1C COB EMBEDDED FRAM
pp. 3-14(12)
Authors: CHOI, D.; PARK, J.; RHIE, H.; JOO, H.; KANG, S.; KANG, Y.; KIM, J.; KOO, B.; LEE, S.; JEONG, H.; KIM, KINAM

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CHARACTERIZATION OF NOVEL ELECTRODE FOR HIGH-DENSITY Pb(Zr, Ti)O 3 CAPACITOR APPLICATION
pp. 15-26(12)
Authors: KOO, JUNE-MO; KIM, SUKPIL; SHIN, SANGMIN; LEE, KWANGHEE; LEE, JANGHO; KIM, KIHONG; SEO, BUM-SEOK; LEE, JUNG; PARK, YOUNGSOO

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INTEGRATION PROCESSES AND PROPERTIES OF SEMICONDUCTIVE OXIDE MEMORY TRANSISTOR
pp. 27-36(10)
Authors: LI, TINGKAI; HSU, SHENG; ULRICH, BRUCE; EVANS, DAVE

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MECHANICAL STABILITY OF Ir ELECTRODES USED FOR STACKED SrBi 2 Ta 2 O 9 FERROELECTRIC CAPACITORS
pp. 37-45(9)
Authors: LISONI, J.; JOHNSON, J.; EVERAERT, J.; GOUX, L.; MEEREN, H.; PARASCHIV, V.; WILLEGEMS, M.; MAES, D.; HASPESLAGH, L.; WOUTERS, D.; CAPUTA, C.; ZAMBRANO, R.

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LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT
pp. 47-55(9)
Authors: TAKAHASHI, ICHIROU; SAKURAI, HIROYUKI; ISOGAI, TATSUFUMI; TERAMOTO, AKINOBU; SUGAWA, SHIGETOSHI; OHMI, TADAHIRO

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NOVEL PZT CAPACITOR TECHNOLOGY FOR 1.6 V FRAM EMBEDDED SMARTCARD
pp. 57-67(11)
Authors: RHIE, H.; JOO, H.; KANG, S.; PARK, J.; KANG, Y.; KOO, B.; CHOI, D.; LEE, S.; BAE, B.; LIM, J.; JEONG, H.; KIM, KINAM

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RIE EFFECT ON THE FERROELECTRIC PROPERTIES
pp. 69-76(8)
Authors: ZHANG, ZHIGANG; XIE, DAN; WEI, CHAOGANG; SHAO, TIANQI; REN, TIANLING; LIU, JIANSHE; LIU, ZHIHONG; ZHU, JUN

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FERROELECTRIC NANOTUBE (FNT) CAPACITORS FOR HIGH-DENSITY SEMICONDUCTOR MEMORIES
pp. 89-96(8)
Authors: SHAISLAMOV, U.; SEO, B.; LEE, S.; PARK, B.; KIM, I.; HONG, S.; YANG, B.

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STUDY ON STRESS OF THE FILMS APPLIED TO FeRAM
pp. 97-103(7)
Authors: JIA, ZE; HU, HONG; XIE, DAN; ZHANG, ZHI-GANG; ZHANG, NING-XIN; REN, TIAN-LING; LIU, LI-TIAN

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STRUCTURAL AND ELECTRICAL PROPERTIES OF FERROELECTRIC BI 3.4 PR 0.6 TI 3 O 12 PREPARED BY A SOL-GEL METHOD
pp. 105-111(7)
Authors: KIM, WON-JEONG; KIM, SANG; PARK, MUN; HA, TAE; CHUNG, JUN-KI; CHOI, EUN; KIM, JONG; HONG, GUN-PYO; CHOI, YONG

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PRE-ANNEALING EFFECTS ON AL METALLIZATION PROPERTIES IN HIGH DENSITY FeRAM DEVICE
pp. 113-122(10)
Authors: CHO, K.; CHOI, J.; YU, H.; KWEON, S.; YEOM, S.; KIM, N.; CHOI, E.; SUN, H.; HONG, S.; HONG, T.; KIM, I.; LEE, J.; UR, S.; LEE, Y.; RYU, S.; CHOI, S.

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LOW-TEMPERATURE PREPARATION OF Pb(Zr x Ti 1−x )O 3 THIN FILM
pp. 123-128(6)
Authors: ZHANG, X.; MENG, X.; SUN, J.; WANG, G.; LIN, T.; CHU, J.

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A NOVEL SCHEME OF CROSS BITLINES FOR FeRAM ARRAY
pp. 131-140(10)
Authors: JIA, ZE; REN, TIAN-LING; LIU, LI-TIAN

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A DUAL-GATE CELL (DGC) FeRAM WITH NDRO AND RANDOM ACCESS SCHEME FOR NANOSCALE AND TERABIT NON-VOLATILE MEMORY
pp. 141-148(8)
Authors: KANG, HEE-BOK; LEE, JAE-JIN; HONG, SUK-KYOUNG; AHN, JIN-HONG; KIH, JOONG-SIK; SUNG, MAN; SUNG, YOUNG-KWON

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A NEW HIGH-RELIABLE 2T/1C FeRAM CELL
pp. 149-155(7)
Authors: WEI, CHAO-GANG; REN, TIAN-LING; ZHANG, ZHI-GANG; XIE, DAN; ZHU, JUN; LIU, LI-TIAN

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VOLTAGE-CONTROLLED OSCILLATOR DESIGN USING FERROELECTRIC VARACTORS
pp. 157-163(7)
Authors: JAMIL, ASAD; KALKUR, T.; CRAMER, N.

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POLARIZATION SWITCHING ANALOG TO DIGITAL CONVERTER
pp. 181-186(6)
Authors: KALKUR, T.; D'AMICO, MIKE; PAULS, GREG

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FERROELECTRIC CHARGE TRANSFER DEVICE USING POLARIZATION-ASSISTED TUNNELING FOR SINGLE TRANSISTOR NONVOLATILE MEMORIES
pp. 187-196(10)
Authors: DALTON, D.; GNADINGER, F.; KLINGENSMITH, D.; OLARIU, V.; KALKUR, T.; RAHMAN, M.; MAHMUD, A.

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DESIGN, MODELING AND CHARACTERIZATION OF AN ACTIVE PHASE SHIFTER USING A FERROELECTRIC CAPACITOR
pp. 197-205(9)
Authors: MAHMUD, ALI; KALKUR, T.; JAMIL, ASAD; CRAMER, N.

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A DESIGN OF FERRO-DFF FOR NONVOLATILE SYSTEMS
pp. 207-215(9)
Authors: YAN, JIEFENG; LAI, LIANZHANG; BINGHANG, L; TANG, TINGAO

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TRIAL FOR MAKING THREE DIMENSIONAL PZT CAPACITOR FOR HIGH DENSITY FERROELECTRIC RANDOM ACCESS MEMORY
pp. 219-226(8)
Authors: FUNAKUBO, HIROSHI; NAGAI, ATSUSHI; MINAMIDATE, JUN; KOO, JUNE; KIM, SUK; PARK, YOUNGSOO

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DEPOSITION OF NANOCRYSTALLINE AND MICROCRYSTALLINE Ba X Sr 1-X TiO 3 BY MEANS OF PULSE MODULATED LOW PRESSURE PLASMA JET SYSTEM
pp. 227-237(11)
Authors: OLEJNÍČEK, J.; HUBIČKA, Z.; VIROSTKO, P.; DEYNEKA, A.; JASTRABÍK, L.; CHVOSTOVÁ, D.; ŠÍCHOVÁ, H.; POKORNÝ, J.

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TRANSPARENT TITANIUM DIOXIDE THIN FILM DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION
pp. 239-248(10)
Authors: LIU, G.; SHAN, F.; LEE, W.; LEE, G.; KIM, I.; SHIN, B.; YOON, S.; CHO, C.

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INVESTIGATION OF Sr-Ru-O/Ru MULTILAYER-ELECTRODES PREPARED BY MOCVD
pp. 249-260(12)
Authors: MINAMIDATE, JUN; NAGAI, ATSUSHI; KUWABARA, HIROKI; FUNAKUBO, HIROSHI; KOO, JUNE; KIM, SUK; PARK, YOUNGSOO

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LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O 3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP) 2 , Zr(MMP) 4 AND Ti(MMP) 4
pp. 261-270(10)
Authors: OTANI, YOHEI; UCHIYAMA, KIYOSHI; OKAMURA, SOICHIRO; SHIOSAKI, TADASHI

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LOW TEMPERATURE PREPARATION OF (Bi,Nd) 4 TI 3 O 12 THIN FILMS BY LIQUID-DELIVERY MOCVD USING NEODYMIUM PRECURSORS WITH HIGH DEPOSITION EFFICIENCY
pp. 271-279(9)
Authors: TASAKI, Y.; SEKITA, Y.; TANAKA, T.; YODA, K.; NITTAMACHI, T.; YOSHIZAWA, S.

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EVALUATION OF METALORGANIC PRECURSORS FOR PREPARING BiFeO 3 THIN FILMS BY LIQUID DELIVERY CHEMICAL VAPOR DEPOSITION
pp. 281-288(8)
Authors: TASAKI, Y.; KANOKO, T.; KABEYA, M.; CHIFU, N.; YOSHIZAWA, S.

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