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Publisher: Taylor and Francis Ltd

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Volume 64, Number 1, Volume 64/2004

GUEST EDITORIAL
pp. ix-xii(4)

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Future Emerging New Memory Technologies
pp. 3-14(12)
Authors: KIM, KINAM; LEE, S.

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The Influence of Mismatch-Induced Field on Thin Ferroelectric Film Size Effects
pp. 17-38(22)
Authors: GLINCHUK, M.; MOROZOVSKA, A.; ELISEEV, E.

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A New Threshold Voltage Model and Prediction of Property of MFIS Structure
pp. 39-49(11)
Authors: YINYINLIN, YUANQI; TANG, TING-AO

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Imaginary Time Schrödinger Treatment for Microstructure Modeling in Ferroelectrics
pp. 51-59(9)
Authors: KLOTINS, E.; SHVARTSMAN, V.; BDIKIN, I.; KHOLKIN, A.

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Simulation on the Hysteresis of Ferroelectric Thin Films
pp. 69-75(7)
Authors: OUYANG, KE-QING; REN, TIAN-LING; LIU, LI-TIAN; WEI, DAN

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On a Novel Ferro Resistive Random Access Memory (FRRAM): Basic Model and First Experiments
pp. 77-88(12)
Authors: MEYER, R.; CONTRERAS, J.; PETRARU, A.; KOHLSTEDT, H.

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A Ferroelectric Capacitor Mathematical Model for Spice Simulation
pp. 101-111(11)
Authors: WEI, CHAO-GANG; REN, TIAN-LING; ZHU, JUN; LIU, LI-TIAN

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Comparison of Materials for the Ferroelectric Thin Film to be Integrated into High Density FeRAMs
pp. 115-124(10)
Authors: BRUCHHAUS, R.; MOON, B.-K.; HILLIGER, A.; NAGEL, N.; YAMADA, Y.; ITOKAWA, H.; YAMAKAWA, K.; KUNISHIMA, I.; BEITEL, G.

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Ferroelectric Properties and Memory Characteristics of Pb(Zr 0.52 Ti 0.48 )O 3 Thin Films Crystallized by Hot Isostatic Pressing
pp. 145-155(11)
Authors: KOBUNE, MASAFUMI; NISHIOKA, YUSUKE; YAZAWA, TETSUO; FUJISAWA, HIRONORI; SHIMIZU, MASARU

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Enhancement of Ferroelectric Properties of Pb(Zr,Ti)O 3 Films Grown by Metal-Organic Chemical Vapor Deposition on Noble-Alloy Bottom Electrodes
pp. 157-168(12)
Authors: SHIN, SANGMIN; KOO, JUNE; LEE, JUNE; KIM, SUK; CHO, CHOONG; PARK, YOUNGSOO; PARK, SUNG; LEE, JUNG; CHO, YOUNG

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Comparison of Retention Characteristics of Pb(Zr,Ti)O 3 (PZT) Capacitors Fabricated with Noble Metal Electrodes and Their Oxide Electrodes
pp. 169-181(13)
Authors: SHIN, SANGMIN; CHO, CHOONG; KOO, JUNE; KIM, SUK; CHO, YOUNG-JIN; PARK, SUNG-HO; LEE, JUNG; PARK, YOUNGSOO; LEE, JUNE-KEY; JO, JI; KIM, DONG; NOH, TAE; YOON, JONG-GUL; KANG, BO

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Heteroepitaxial Growth and Ferroelectric Properties of PbZr 0.52 Ti 0.48 O 3 /SrRuO 3 Structure on TiO 2 -Terminated SrTiO 3 (100) by Pulsed Laser Deposition
pp. 183-189(7)
Authors: AHN, KYEONG-CHAN; LEE, WOO-SUNG; KIM, CHEOL-JUNG; CUONG, NGUYEN; YOON, SOON-GIL; CHOI, YU-JEONG

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Sol-Gel Derived Pb(Zr 0.53 Ti 0.47 )O 3 Thin Films on BaPbO 3 Electrode
pp. 191-200(10)
Authors: LIANG, CHUN-SHENG; WU, JENN-MING

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A Study of UV-Photolysis Effects on Ferroelectricity in PZT Thin Films
pp. 201-206(6)
Authors: LEE, SANG-A.; JEONG, SE-YOUNG; HWANG, JAE-YEOL; KIM, JONG-PIL; CHO, CHAE-RYONG

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Sol-Gel Derived Lead Zirconate Titanate Thick Films and Their Improved Pyroelectric Properties
pp. 207-216(10)
Authors: ZHANG, Q.; SHAW, C.; HUANG, Z.; WHATMORE, R.

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Comparison Study of (001)-/(100)-Oriented Epitaxial and Fiber-Textured Pb(Zr,Ti)O 3 Thick Films Prepared by MOCVD
pp. 217-225(9)
Authors: Yokoyama, Shintaro; HONDA, YOSHIHISA; MORIOKA, HITOSHI; OKAMOTO, SHOJI; IIJIMA, TAKASHI; MATSUDA, HIROFUMI; SAITO, KEISUKE; FUNAKUBO, HIROSHI

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Fabrication and Characterization of Ba(Ti,Zr)O 3 Thin Films Through the Chemical Solution Deposition Process
pp. 227-236(10)
Authors: TANAKA, KIYOTAKA; SUZUKI, KAZUYUKI; FU, DESHENG; NISHIZAWA, KAORI; MIKI, TAKESHI; KATO, KAZUMI

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Pb(Zr,Ti)O 3 Thin Film Deposited Using AlN Buffer Layer and Its Ferroelectric Properties
pp. 237-246(10)
Authors: LIN, YUNG-CHEN; CHOU, CHENG-HSIEN; TAI, NYAN-HWA; HUANG, JIN-HUA; LIN, I-NAN

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Characteristics of Ferroelectric Gate Transistor Using Nd 2 Ti 2 O 7 /HfO 2 /Si Structures
pp. 269-276(8)
Authors: KIM, WOO; LEE, CHANG; YANG, JUN-KYU; PARK, HYUNG-HO

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PZT Capacitors on Top of CrTiN/TiN Double Barrier Layers
pp. 289-295(7)
Authors: LEE, JINWOO; OH, TAEKWAN; HONG, SUK-KYOUNG; KIM, JIYOUNG

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ISIF 2005
pp. 317-321(5)

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