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Publisher: Taylor and Francis Ltd

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Volume 58, Number 1, Volume 58/2003

Guest Editorial
pp. v-vii(3)
Authors: Joshi, Vikram; Agrawal, Sanjeev; Ramesh, R.

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Hysteresis Offset and Dielectric Response of Compositionally Graded Ferroelectric Materials
pp. 1281-1291(11)
Authors: Ban, Z.-G.; Alpay, S. P.; Mantese, J. V.

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Planar and Parallel Dielectric Properties of Compositionally Graded (Ba, Sr)TiO3 Thin Films for Tunable Microwave Applications
pp. 1305-1314(10)
Authors: Lee, Su-Jae; Moon, Seungeon; Kwak, Min-Hwan; Ryu, Han-Cheol; Kim, Young-Tae; Lee, Sang-Seok; Han, Seok-Kil

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Dielectric Behavior of BaTiO3/SrTiO3 Oxide Artificial Lattice by Strain Manipulation
pp. 1327-1335(9)
Authors: Kim, Juho; Kim, Leejun; Jung, Donggeun; Lee, Jaichan

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Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature
pp. 1337-1345(9)
Authors: Prudan, A.; Kozyrev, A.; Zemtsov, A.; Osadchy, V.; Ginley, D.; Kaydanova, T.; Perkins, J. D.; Alleman, J.; Sengupta, L.; Chiu, L.; Zhang, X.

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A Model of Phase Transition Kinetics in Lead Scandium Tantalate Thin Films
pp. 1347-1357(11)
Authors: Battat, J.; Huang, Z.; Donohue, P. P.; Whatmore, R. W.

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The Order Parameter in Relaxors
pp. 1359-1370(12)
Authors: Prosandeev, S. A.; Waghmare, U.; Raevski, I. P.; Jastrabik, L.

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Shift of Phase Transition Temperature in Strontium Titanate Thin Films
pp. 1371-1379(9)
Authors: Astafiev, Konstantin; Sherman, Vladimir; Tagantsev, Alexander; Setter, Nava; Petrov, Peter; Kaydanova, Tatyana; Ginley, David; Hoffmann-Eifert, Susanne; Böttger, Ulrich; Waser, Rainer

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An Equivalent Circuit Model for Ba0.5Sr0.5TiO3-Based Capacitors
pp. 1395-1402(8)
Authors: Cramer, N.; Kalkur, T. S.; Philofsky, E.; Kammerdiner, L.

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A Study of Evolution of Structural Parameters of PZT-Based Ferrosoft Ceramics in the Vicinity of Transition to a Paraelectric Phase
pp. 1403-1407(5)
Authors: Akbaeva, G. M.; Zakharchenko, I. N.; Borodin, V. Z.; Sitalo, E. G.

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The Modeling and Calculation of One Transistor Memory Devices
pp. 1409-1417(9)
Author: Li, Qingfeng (Anna)

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