Integrated Ferroelectrics

Guest Editorial
pp. vii-ix(3)
Authors: Joshi, Vikram; Agrawal, Sanjeev; Ramesh, R.

Organizing Committee and Sponsors
pp. xi-xii(2)

Novel Ferroelectric Candidates in a Series of ABi₄Ti₄O₁₅ (A: Alkaline Earth Metals) Thin Films
pp. 3-10(8)
Authors: Kato, Kazumi; Suzuki, Kazuyuki; Fu, Desheng; Nishizawa, Kaori; Miki, Takeshi

Ferroelectric Properties of Pb(Zr_{1 − x},Ti_x)O₃ Prepared by Modified Metallo-Organic-Decomposition Process
pp. 11-18(8)
Authors: Liu, Shih-Yen; Chou, Chen-Shan; Huang, Jin-Hua; Lin, I-Nan

Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O₃ Capacitors with SrRuO₃ Electrodes on Si Wafers
pp. 19-31(13)
Authors: Maki, K.; Liu, B. T.; So, Y.; Vu, H.; Ramesh, R.; Finder, J.; Yu, Z.; Droopad, R.; Eisenbeiser, K.

Improvement of Crystallinity in Sol-Gel Derived (Bi,La)₄Ti₃O₁₂ Films by Optimizing Dry-Gel Structures
pp. 33-40(8)
Authors: Iseki, Kunie; Fujisaki, Yoshihisa; Ishiwara, Hiroshi

Fabrication of Ion-Cosubstituted Bismuth Titanate Thin Films by Chemical Solution Deposition Method
pp. 41-54(14)
Authors: Uchida, Hiroshi; Okada, Isao; Matsuda, Hirofumi; Iijima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi

Compositional Dependence of Ferroelectric Properties for (Y,Yb)MnO₃ Thin Films Prepared by Chemical Solution Deposition
pp. 55-61(7)
Authors: Suzuki, Kazuyuki; Fu, Desheng; Nishizawa, Kaori; Miki, Takeshi; Kato, Kazumi

Influence of Asymmetric Oxide Electrode Structures on the Interface Capacity and the Failure Mechanisms in PZT Thin Films
pp. 63-71(9)
Authors: Ellerkmann, U.; Schorn, P.; Bolten, D.; Boettger, U.; Waser, R.; Bruchhaus, R.; Yamakawa, K.

Improved Ferroelectric Properties in Mn-Doped PZT Thin Films
pp. 73-84(12)
Authors: Zhang, Q.; Whatmore, R. W.

Preparation of BaPbO₃ Electrode Thin Films by RF Magnetron Sputtering
pp. 85-94(10)
Authors: Nishida, T.; Kawakami, I.; Okamura, S.; Shiosaki, T.

Address of SiO₂-Based Addtives in Bi₄Ti₃O₁₂ Thin Films
pp. 95-102(8)
Authors: Kato, Kazumi; Ishiwara, Hiroshi

IrO₂/Ir Multilayer-Structure Electrode for MFMIS Ferroelectric Gate Transistors
pp. 103-109(7)
Authors: Sugita, Naoki; Tokumitsu, Eisuke

A Very Low-Temperature Growth of BaTiO₃ Thin Film by Hydrothermal Treatment Following Sol-Gel Coating at 200 Degree Celsius
pp. 111-118(8)
Authors: Wei, Zhiqiang; Noda, Minoru; Okuyama, Masanori

Laser Annealing of Pb(Zr_0.52Ti_0.48)O₃ Thin Films Using Pulsed Excimer (KrF) Laser
pp. 119-126(8)
Authors: Kuchipudi, Srinivas; Lin, I-Nan; Lee, Hsiu-Chuan; Lin, Yung-Chen; Luo, Yu-Lin; Huang, Jin-Hua; Tai, Nyan-Hwa; Lin, Su-Jien

Influence of Pt/TiO₂ Bottom Electrodes on the Properties of Ferroelectric Pb(Zr,Ti)O₃ Thin Films
pp. 127-136(10)
Authors: Okamura, Soichiro; Abe, Norikazu; Otani, Yohei; Shiosaki, Tadashi

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films--Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing
pp. 137-145(9)
Authors: Karasawa, Junichi; Aoyama, Taku; Kijima, Takeshi; Natori, Eiji; Shimoda, Tatsuya

Effect of Zr/Ti Ratio on the Properties of PZT Thin Films Made by MOCVD Using Ultrasonic Nebulization
pp. 147-154(8)
Authors: Lee, Choon-Ho; Kim, Sun-Il

Imprint Characteristics of Bi-Layered Perovskite Ferroelectric Thin Films
pp. 155-161(7)
Authors: Lee, Seaung-Suk; Noh, Keum-Hwan

Low-Temperature Process of Ferroelectric (Y_0.95,Bi_0.05)MnO₃ Thin Films and Their Structural and Electrical Properties
pp. 163-170(8)
Authors: Choi, Taekjib; Kim, Si Won; Yoon, Kyung Sun; Kim, Young Sung; Lee, Jaichan

Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi_3.15La_0.85Ti₃O₁₂ Thin Films
pp. 171-178(8)
Authors: Lee, Nam-Yeal; Lee, Won-Jae; Ryu, Sang-Ouk; You, In-Kyu; Yoon, Sung-Min; Cho, Seong Mok; Shin, Woong-Chul; Yu, Byoung-Gon; Kim, Jindong

Formation of Silicate-Added (Bi,La)₄Ti₃O₁₂ Films on LaAlO₃/Si(100) Structures
pp. 179-186(8)
Authors: Park, Byung-Eun; Ishiwara, Hiroshi

Retention Characteristics of (Bi,La)₄Ti₃O₁₂ Films on Si(100) Substrates Using LaAlO₃ Buffer Layers
pp. 187-193(7)
Authors: Park, Byung-Eun; Ishiwara, Hiroshi

Fabrication of Ferroelectric Gate Memory Device Using BLT/HfO₂/Si Gate Structure
pp. 195-203(9)
Authors: Yoon, Sung-Min; You, In-Kyu; Lee, Nam-Yeal; Kim, Kwi-Dong; Cho, Seong-Mok; Ryu, Sang-Ouk; Shin, Woong-Chul; Choi, Kyu-Jung; Yu, Byoung-Gon

PZT Thin Films with Decreasing Thickness Crystallized at 400°C
pp. 205-213(9)
Authors: Mandeljc, Mira; Malič, Barbara; Kosec, Marija

Characterization of BLT Films Formed by Using a Flash-Annealing Process on Pt/(Cr, Ti)N/TiN/Ti Bottom Electrode
pp. 215-222(8)
Authors: Ohki, Hiroshi; Ishiwara, Hiroshi

The Study of Ferroelectric La-Doped PbTiO₃ Thin Films Prepared by RF Magnetron Sputtering
pp. 223-228(6)
Authors: Yang, Chengtao; Zhang, Shuren; Liu, Jingsong; Wu, Menqiang

Miniature Microphone with Silicon-Based Ferroelectric Thin Films
pp. 229-235(7)
Authors: Yang, Yi; Ren, Tian-Ling; Zhang, Lin-Tao; Zhang, Ning-Xin; Wu, Xiao-Ming; Liu, Jian-She; Liu, Li-Tian; Li, Zhi-Jian

Preparation of Si-Added SrBi₂Ta₂O₉ Ferroelectric Thin Films by RF Magnetron Sputtering
pp. 237-244(8)
Authors: Kikuchi, Shin; Ishiwara, Hiroshi