Electrical Characteristics and Thermal Stability of Pt/HfO2/Si Metal-Insulatror-Semiconductror Capacitors

Authors: Choi K-J.; Shin W-C.; Park J-B.; Yoon S-G.

Source: Integrated Ferroelectrics, Volume 48, Number 1, 1 January 2002 , pp. 13-21(9)

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Abstract:

The HfO₂ thin films for use in gate dielectric applications were deposited at 300 square

onto p-type Si (100) substratee using Hf[OC(CH₃)₃]₄ as the precursor in the absence of oxygen by plasma-enhanced chemical vapor deposition. The HfO₂ films deposited in the absence of O₂ show excellent electrical properties such as low capacitance equivalent thickness (CET), good thermal stability and low charge trapping. The as-deposited films have an interfacial layer of approximately 1 nm in thickness, resulting in a decrease in the thickness of the interfacial layer by about 50% compared to films deposited in the presence of oxygen. The leakage current density of HfO₂ films was approximately 3 orders of magnitude lower than an electrically comparable SiO₂ at the same CET. The improvement of electrical properties can be attributed to the decrease in the SiO₂ interfacial layer. The thickness of the interfacial layer can be contolled by the deposition in the absence of oxygen after evacuation of the reaction chamber by means of an ultra-high vacuum.

Document Type: Research article

Affiliations: 1: Department of Materials Engineering, Chungnam National Univeristy, Daedeok Science Town, Daejeon, 305-764, Korea

Publication date: 2002-01-01

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