Integrated Ferroelectrics

Preface
pp. ix-x(2)
Author: Shiosaki T.

Guest Editorial
pp. xi-xi(1)
Authors: Miyasaka Y.; Otsuki T.

Conference Committees and Sponsors
pp. xiii-xiii(1)

Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition
pp. 3-12(10)
Authors: Zhuang W.; Conley J.F.; Ono Y.; Evans D.R.; Solanki R.

Electrical Characteristics and Thermal Stability of Pt/HfO2/Si Metal-Insulatror-Semiconductror Capacitors
pp. 13-21(9)
Authors: Choi K-J.; Shin W-C.; Park J-B.; Yoon S-G.

Characteristics of ZrO2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications
pp. 23-32(10)
Authors: Park J.; Choi B.; Park N.; Shin H-J.; Lee J-G.; Kim J.

Characteristics of Zirconium Based Amorphous Thin Films Deposited by Co-Sputtering
pp. 33-40(8)
Authors: Jeon C-B.; Kong S-H.; Shin H.; Ahn J.; Kim J.

Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure
pp. 41-50(10)
Authors: Nishikawa T.; Otsuka T.; Morita K.

Structural Transformation and Pressure-Induced Phase Transition in PZT
pp. 53-58(6)
Authors: Rouquette J.; Bornand V.; Haines J.; Papet P.h.; Gorelli F.

Switching Dynamics in Ferroelectric Thin Films: An Experimental Survey
pp. 59-68(10)
Authors: Jung D.J.; Dawber M.; Scott J.F.; Sinnamon L.J.; Gregg J.M.

Octahedral Tilting Domain Boundary in Calcium-Modified Lead Titanate Ceramics
pp. 69-78(10)
Authors: Su I-W.; Chou C-C.; Tsai D-S.

Modeling of Ferroelectric Switching Excited by Triangular or Sinusoidal Voltage Signals
pp. 79-87(9)
Authors: Sun S.; Kalkur T.S.

Comparison of MFMOS and MFOS One Transistor Memory Devices
pp. 91-99(9)
Authors: Li T.; Hsu S.T.; Ulrich B.; Evans D.

A Novel Single-FET Cell and Array Architecture for Ferroelectric Nonvolatile Memories
pp. 101-107(7)
Authors: Zhang W-Q.; Ren T-L.; Li C-X.; Liu L-T.; Zhu J.; Li Z-J.

A Novel Sense-Amplifier and Plate-Line Architecture for Ferroelectric Memories
pp. 109-118(10)
Authors: Rickes J.T.; Mcadams H.; Grace J.; Fong J.; Gilbert S.; Wang A.; Lee D.; Pietrzyk C.; Lanham R.; Amano J.; Summerfelt S.; Moise T.; Waser R.M.

Advanced Encapsulating Barrier Layer Technology for 0.25 m 1T1C 32Mbit FRAM
pp. 119-126(8)
Authors: Joo H.J.; Song Y.J.; Kim H.H.; Jang N.W.; Lee S.Y.; Park Y.S.; Kim K.

Key Technologies for High Density FeRAM Applications
pp. 127-137(11)
Authors: Nagel N.; Kunishima I.

Thickness Scaling of Pb(Zr,Ti)O3 Thin Films and Pt Electrodes for High Density FeRAM Devices
pp. 139-147(9)
Authors: Kim S-H.; Koo C.Y.; Ha S.M.; Woo H.J.; Park D.Y.; Lim J.E.; Hwang C.S.; Ha J.

A Low Temperature LNO/PZT/LNO Ferroelectric Capacitor-Over-Interconnect (COI) FeRAM Module for Modular SOC
pp. 149-160(12)
Authors: Lung S.L.; Chen S.S.; Tsai C.W.; Sheng T.T.; Lai S.C.; Liu C.L.; Wu T.B.; Liu R.

The Control of Pb Loss for PZT Based FRAM
pp. 161-169(9)
Authors: Chu F.; Fox G.; Davenport T.; Miyaguchi Y.; Suu K.

Novel PZT Capacitor Technology for 32Mb and Beyond FRAM Device Using PbTiO3 Seeding Layer
pp. 171-180(10)
Authors: Lee K.M.; Park K.S.; Nam S.D.; Lee S.W.; Joo S.H.; Seo J.S.; Kim Y.D.; Cho S.L.; Son Y.H.; An H.G.; Kim H.J.; Chung Y.J.; Heo J.E.; Lee M.S.; Park S.O.; Chung U.I.; Moon J.T.

Switching Process in SBT Thin Films
pp. 181-189(9)
Authors: Li C.; Guo L.; Zhu J.; Lu X.; Liu Z.; Wang Y.

Reduced Thermal Budget Process for SBT Thin Film in Planer Type Stack Cell FeRAMs
pp. 193-202(10)
Authors: Karasawa J.; Hamada Y.; Ohashi K.; Natori E.; Oguchi K.; Shimoda T.; Joshi V.; Solayappan N.; Lim M.; Celinska J.; Mcmillan L.D.; De Araujo C.A.P.

Signal Window Map--A New Analysis Tool for FeRAM
pp. 203-211(9)
Authors: Rehm N.; Jacob M.; Wohlfahrt J.

Etching Mechanism of Ferroelectric Film Etched by Helicon Plasma Method
pp. 213-220(8)
Authors: You I-K.; Yoon S-M.; Cho S.M.; Kim K.D.; Ryu S-O.; Lee N.Y.; Yu B-G.; Koo J.G.; Kim J.D.

Reactive Ion Beam Etching Effects on Maskless PZT Properties
pp. 221-229(9)
Authors: Soyer C.; Cattan E.; Remiens D.

Integration Technology of Interlayer and Intermetallic Dielectrics for High Density 32Mb FRAM
pp. 231-238(8)
Authors: Song Y.J.; Joo H.J.; Jang N.W.; Lee S.Y.; Kim H.H.; Park Y.S.; Kim K.

Etch Characteristics of Ferroelectric (Bi4-xLax)Ti3O12 Thin Films in an Inductively Coupled Plasma
pp. 239-244(6)
Authors: Yoon J.K.; Byun Y.H.; Song Y.S.; Chung C.W.; Lee J.K.

On-Chip Integration of Pt/(Ba,Sr)TiO3/Pt Thin Film Capacitors
pp. 245-254(10)
Authors: Liedtke R.; Hoffmann M.; Boettger U.; Waser R.

A Mathematical Description of the Switching Behavior of Ferroelectric Thin Films for FRAM Applications
pp. 255-262(8)
Author: Chu F.

SbSI Films for Ferroelectric Memory Applications
pp. 263-269(7)
Authors: Surthi S.; Kotru S.; Pandey R.K.

Preparation and Etching of Silicon-Based Piezoelectric Thin Films for Integrated Devices
pp. 271-279(9)
Authors: Zhao H-J.; Ren T-L.; Zhang L-T.; Liu J-S.; Liu L-T.; Li Z-J.

High Temperature Oxidation of TiAlN Thin Films for Memory Devices
pp. 281-290(10)
Authors: Park S-S.; Yoon S-G.