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Publisher: Taylor and Francis Ltd

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Volume 48, Number 1, 1 January 2002

Preface
pp. ix-x(2)
Author: Shiosaki, Tadashi

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Guest Editorial
pp. xi-xi(1)
Authors: Miyasaka, Yoichi; Otsuki, Tatsuo

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Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition
pp. 3-12(10)
Authors: Zhuang, Weiwei; Conley, John F.; Ono, Yoshi; Evans, David R.; Solanki, R.

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Electrical Characteristics and Thermal Stability of Pt/HfO2/Si Metal-Insulatror-Semiconductror Capacitors
pp. 13-21(9)
Authors: Choi, Kyu-Jeong; Shin, Woong-Chul; Park, Jong-Bong; Yoon, Soon-Gil

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Characteristics of ZrO2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications
pp. 23-32(10)
Authors: Park, Juwhan; Choi, Bongsik; Park, Nohhon; Shin, Hyun-Jung; Lee, Jae-Gab; Kim, Jiyoung

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Characteristics of Zirconium Based Amorphous Thin Films Deposited by Co-Sputtering
pp. 33-40(8)
Authors: Jeon, Chang-Bae; Kong, Seong-Ho; Shin, Hyunjung; Ahn, Jinho; Kim, Jiyoung

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Structural Transformation and Pressure-Induced Phase Transition in PZT
pp. 53-58(6)
Authors: Rouquette, J.; Bornand, V.; Haines, J.; Papet, P h.; Gorelli, F.

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Switching Dynamics in Ferroelectric Thin Films: An Experimental Survey
pp. 59-68(10)
Authors: Jung, D. J.; Dawber, M.; Scott, J. F.; Sinnamon, L. J.; Gregg, J. M.

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Octahedral Tilting Domain Boundary in Calcium-Modified Lead Titanate Ceramics
pp. 69-78(10)
Authors: Su, I-Wei; Chou, Chen-Chia; Tsai, Dah-Shyang

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Comparison of MFMOS and MFOS One Transistor Memory Devices
pp. 91-99(9)
Authors: Li, Tingkai; Hsu, Sheng Teng; Ulrich, Bruce; Evans, Dave

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A Novel Single-FET Cell and Array Architecture for Ferroelectric Nonvolatile Memories
pp. 101-107(7)
Authors: Zhang, Wu-Quan; Ren, Tian-Ling; Li, Chun-Xiao; Liu, Li-Tian; Zhu, Jun; Li, Zhi-Jian

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A Novel Sense-Amplifier and Plate-Line Architecture for Ferroelectric Memories
pp. 109-118(10)
Authors: Rickes, J├╝rgen T.; Mcadams, Hugh; Grace, James; Fong, John; Gilbert, Steve; Wang, Angela; Lee, Dave; Pietrzyk, Cezary; Lanham, Ralph; Amano, Jun; Summerfelt, Scott; Moise, Ted; Waser, Rainer M.

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Advanced Encapsulating Barrier Layer Technology for 0.25 m 1T1C 32Mbit FRAM
pp. 119-126(8)
Authors: Joo, H. J.; Song, Y. J.; Kim, H. H.; Jang, N. W.; Lee, S. Y.; Park, Y. S.; Kim, Kinam

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Key Technologies for High Density FeRAM Applications
pp. 127-137(11)
Authors: Nagel, N.; Kunishima, I.

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Thickness Scaling of Pb(Zr,Ti)O3 Thin Films and Pt Electrodes for High Density FeRAM Devices
pp. 139-147(9)
Authors: Kim, Seung-Hyun; Koo, C. Y.; Ha, S- M.; Woo, H- J.; Park, D- Y.; Lim, J. E.; Hwang, C. S.; Ha, J.

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A Low Temperature LNO/PZT/LNO Ferroelectric Capacitor-Over-Interconnect (COI) FeRAM Module for Modular SOC
pp. 149-160(12)
Authors: Lung, S. L.; Chen, S. S.; Tsai, C. W.; Sheng, T. T.; Lai, S. C.; Liu, C. L.; Wu, T. B.; Liu, Rich

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The Control of Pb Loss for PZT Based FRAM
pp. 161-169(9)
Authors: Chu, Fan; Fox, Glen; Davenport, Tom; Miyaguchi, Yuusuke; Suu, Koukou

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Novel PZT Capacitor Technology for 32Mb and Beyond FRAM Device Using PbTiO3 Seeding Layer
pp. 171-180(10)
Authors: Lee, K. M.; Park, K. S.; Nam, S. D.; Lee, S. W.; Joo, S. H.; Seo, J. S.; Kim, Y. D.; Cho, S. L.; Son, Y. H.; An, H. G.; Kim, H. J.; Chung, Y. J.; Heo, J. E.; Lee, M. S.; Park, S. O.; Chung, U. I.; Moon, J. T.

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Switching Process in SBT Thin Films
pp. 181-189(9)
Authors: Li, Chunhua; Guo, Lei; Zhu, Jinsong; Lu, Xiaomei; Liu, Zhiguo; Wang, Yening

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Reduced Thermal Budget Process for SBT Thin Film in Planer Type Stack Cell FeRAMs
pp. 193-202(10)
Authors: Karasawa, Junichi; Hamada, Yasuaki; Ohashi, Koji; Natori, Eiji; Oguchi, Koichi; Shimoda, Tatsuya; Joshi, Vikram; Solayappan, Nararyan; Lim, Myungho; Celinska, Jolanta; Mcmillan, Larry D.; De Araujo, Carlos A. Paz

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Signal Window Map--A New Analysis Tool for FeRAM
pp. 203-211(9)
Authors: Rehm, N.; Jacob, M.; Wohlfahrt, J.

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Etching Mechanism of Ferroelectric Film Etched by Helicon Plasma Method
pp. 213-220(8)
Authors: You, In-Kyu; Yoon, Sung-Min; Cho, Seong Mok; Kim, Kwi Dong; Ryu, Sang-Ouk; Lee, Nam Yeal; Yu, Byoung-Gon; Koo, Jin Gun; Kim, Jong Dae

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Reactive Ion Beam Etching Effects on Maskless PZT Properties
pp. 221-229(9)
Authors: Soyer, C.; Cattan, E.; Remiens, D.

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Integration Technology of Interlayer and Intermetallic Dielectrics for High Density 32Mb FRAM
pp. 231-238(8)
Authors: Song, Yoon J.; Joo, H. J.; Jang, N. W.; Lee, S. Y.; Kim, H. H.; Park, Y. S.; Kim, Kinam

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Etch Characteristics of Ferroelectric (Bi4−xLax)Ti3O12 Thin Films in an Inductively Coupled Plasma
pp. 239-244(6)
Authors: Yoon, Jin Koo; Byun, Yo Han; Song, Young Soo; Chung, Chee Won; Lee, June Key

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On-Chip Integration of Pt/(Ba,Sr)TiO3/Pt Thin Film Capacitors
pp. 245-254(10)
Authors: Liedtke, R.; Hoffmann, M.; Boettger, U.; Waser, R.

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SbSI Films for Ferroelectric Memory Applications
pp. 263-269(7)
Authors: Surthi, Shyam; Kotru, Sushma; Pandey, R. K.

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Preparation and Etching of Silicon-Based Piezoelectric Thin Films for Integrated Devices
pp. 271-279(9)
Authors: Zhao, Hong-Jin; Ren, Tian-Ling; Zhang, Lin-Tao; Liu, Jian-She; Liu, Li-Tian; Li, Zhi-Jian

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High Temperature Oxidation of TiAlN Thin Films for Memory Devices
pp. 281-290(10)
Authors: Park, Sang-Shik; Yoon, Soon-Gil

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