Publisher: Taylor and Francis Ltd

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Volume 47, Number 1, 1 January 2002

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Guest Editorial
pp. xi-xi(1)
Authors: Miyasaka, Yoichi; Otsuki, Tatsuo

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Preface
pp. ix
Author: Shiosaki, Tadashi

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Structural and Dielectric Behavior or Ba-Substituted Pb(Yb1/2Nb1/2)O3 Ceramics
pp. 3-10(8)
Authors: Kim, Jai-Hyun; Kim, Hyoun Soo; Koh, Kyung Shin; Shim, Il Wun; Choo, Woong Kil

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Phase Transition Behavior of Sc-Substituted Pb(Yb1/2Nb1/2)O3 Ceramics
pp. 11-18(8)
Authors: Kim, Jai-Hyun; Koh, Kyung Shin; Choo, Woong Kil

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Poling of Ferroelectric PT/P(VDF-TrFE) 0-3 Composite
pp. 19-28(10)
Authors: Or, Y. T.; Ploss, B.; Shin, F. G.; Chan, H. L. W.; Choy, C. L.

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A Constant Reference Bit-line Voltage Data Sensing Technique Without Reference Cell for 1T1C FeRAMs
pp. 51-60(10)
Authors: Kim, Shiho; Kim, J. S.; You, I. K.; Lee, W. J.; Yu, B. G.; Maes, Herman

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Integration of FeRAM Devices into a Standard CMOS Process-Impact of Ferroelectric Anneals on CMOS Characteristics
pp. 61-70(10)
Authors: Röhner, M.; Mikolajick, T.; Nagel, N.; Hagenbeck, R.

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Electrical Properties of Nonvolatile Latches for New Logic Application
pp. 71-78(8)
Authors: Fujimori, Y.; Nakamura, T.; Takasu, H.

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Oxygen Diffusion Barriers for High-Density FeRAMs
pp. 79-88(10)
Authors: Moon, B. K.; Pinnow, C. U.; Imai, K.; Arisumi, O.; Itokawa, H.; Hornik, K.; Tsutsumi, K.; Hilliger, A.; Kunishima, I.; Nagel, N.; Yamakawa, K.; Beitel, G.

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Effects of Substrates on Alkoxy-Derived (Y,Yb)MnO3 Thin Films
pp. 91-100(10)
Authors: Suzuki, Kazuyuki; Fu, Desheng; Nishizawa, Kaori; Miki, Takeshi; Kato, Kazumi

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Influence of Excitation Frequency and Amplitude on the Switching Properties of SBT and PZT Thin Films at 10 MHZ Hysteresis Frequency
pp. 101-111(11)
Authors: Kall, U.; Böttger, U.; Lin, Y.- K.; Schneller, T.; Waser, R.; Schmitz, T.; Tiedke, S.

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Thermally Activated Low Frequency Dielectric Dispersion of Antiferroelectric Pb1.075La0.025Zr0.95Ti0.05O3 Thin Film
pp. 125-134(10)
Authors: Kim, Ill Won; Lee, Dae Su; Kim, Jin Soo; Kim, Yong Ha; Choi, Byung Chun; Jeong, Jung Hyun; Yi, Soung Soo; Kim, Young Soo

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Retention Characteristic of Bi3.25La0.75Ti3O12 Thin Films Prepared by Metalorganic Decomposition
pp. 135-141(7)
Authors: Zhang, X. S.; Zhu, J. S.; Lu, X. M.; Wang, Y. N.

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Dielectric Properties of Irradiated Ferroelectric and Antiferroelectric Thin Films
pp. 143-152(10)
Authors: Bittner, R.; Humer, K.; Weber, H. W.; Cakare, L.; Sternberg, A.; Lesnyh, D. A.; Kulikov, D. V.; Trushin, Y. V.

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Effect of In-Situ Applied Electric Field on Structure and Ferroelectric Properties of SrBi2Ta2O9 Films
pp. 153-158(6)
Authors: Ling, Huiqin; Li, Aidong; Wu, Di; Yu, Tao; Liu, Zhiguo; Ming, Naiben

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Growth and Dielectric Properties of BaTiO3/SrTiO3 Artificial Lattice with Asymmetric Stacking Sequence
pp. 159-166(8)
Authors: Kim, Juho; Kim, Leejun; Jung, Donggeun; Kim, Young Sung; Lee, Jaichan

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Ferroelectric Properties and Current Conducition mechanisms of Pt/(Bi,La)4Ti3O12/Pt Capacitors
pp. 177-185(9)
Authors: Kim, N. K.; Song, C. R.; Kweon, S. Y.; Choi, E. S.; Lee, S. E.; Yeom, S. J.; Roh, J. S.

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Electrical Properties of Vanadium Doped Bi-La-Ti-O Thin Films Derived by Chemical Solution Deposition Method
pp. 187-196(10)
Authors: Chiu, T.- W.; Wakiya, N.; Shinozaki, K.; Mizutani, N.

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Simulation of Leakage Current in Thin Films with Dead Layers
pp. 197-206(10)
Authors: Schroeder, H.; Schmitz, S.; Meuffels, P.

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Influence of Structural Properties on RF and Microwave Characteristics of BaSrTiO3 Films on Various Substrates
pp. 207-216(10)
Authors: Karmanenko, S. F.; Dedyk, A. I.; Isakov, N. N.; Oh, Young-Jei; Sakharov, V. I.; Serenkov, I. T.

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Current-Temperature Characteristics of Low-Temperature-Sputtered (Ba,Sr)TiO3 Films Post Treated by Rapid Thermal Annealing
pp. 217-225(9)
Authors: Shye, Der-Chi; Chen, Jyh-Shin; Kuo, Meng-Wei; Chou, Bruce C. S.; Jan, Chueh-Kuei; Wu, Mei-Fang; Chiou, Bi-Shiou; Cheng, Huang-Chung

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Asymmetric Dielectric and Ferroelectric Behavior of CSD Prepared Ultrathin Sr0.8Bi2.2Ta2O9 Films
pp. 227-233(7)
Authors: Jiménez, R.; Alemany, C.; González, A.; Calzada, M. L.; Mendiola, J.

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Growth and Dielectric Properties of BaTiO3/SrTiO3 Artificial Lattice with Asymmetric Stacking Sequnce
pp. 235-242(8)
Authors: Kim, Juho; Kim, Leejun; Jung, Donggeun; Kim, Young Sung; Lee, Jaichan

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Influence of Nb2O5 Content on Dielectric Characteristics of Ferroelectric SBN Ceramics
pp. 245-257(13)
Authors: Kim, Myoung-Sup; Kang, Shin-Il; Lee, Joon-Hyung; Kim, Jeong-Joo; Lee, Hee Young; Cho, Sang-Hee

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An Effective Interlayer Dielectric and Passivation Scheme Using Reactively Sputtered AL2O3 for (Ba,Sr)TiO3 Capacitors
pp. 259-264(6)
Authors: Kassam, A.; Koutsaroff, I.; Mcneil, L.; Obeng, J.; Woo, P.; Zelner, M.

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Modification of Dielectric Properties of the Lead Magnesium Niobate-Lead Titanate Ferroelectrics System
pp. 265-275(11)
Authors: Hwang, Wen-Jeng; Huang, Yung-Hsiang; Lu, Chung-Hsin

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New, Lead Free Materials with a Diffuse Phase Transition: NaNbO3-Based Solid Solutions
pp. 277-283(7)
Authors: Raevski, I. P.; Prosandeev, S. A.; Jastrabik, L.

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