Crystallization of Zirconium-Rich PLZT Thin Films Below 500°C

Authors: Mandeljc M.; Mali ccaron B.; Kosec M.; Dra zcaron i ccaron G.

Source: Integrated Ferroelectrics, Volume 46, Number 1, 1 January 2002 , pp. 329-338(10)

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Abstract:

The general problem of processing zirconium-rich lead-lanthanum-zirconate-titanate (PLZT) thin films at the commonly used temperatures between 600 ° and 650 °C is lead-oxide loss, leading to the formation of a non-ferroelectric, surface pyrochlore-type phase. To avoid lead-oxide losses due to sublimation and/or the interaction of the film with the substrate, it is desirable that the annealing temperatures are as low as possible. Our goal was to study and prepare perovskite PLZT 9.5/65/35 (Pb_0.858La_0.095Zr_0.65Ti_0.35O₃) thin films below 500 °C.

At 400 °C the growth of the perovskite phase follows the parabolic law typical of diffusion controlled processes. During prolonged annealing growth continues until the limiting stoichiometry of the perovskite phase with regard to the PbO is reached. We conclude that, even at this low temperature the amount of PbO in the film is the critical factor in the crystallization of the perovskite phase.

Keywords: PLZT thin films; chemical solution deposition (CSD); low-temperature crystallisation

Document Type: Research article

Affiliations: 1: Jo zcaron ef Stefan Institute, Jamova 39, Sl-1000 Ljubljana, Slovenia ef Stefan Institute, Jamova 39, Sl-1000 Ljubljana, Slovenia">

Publication date: 2002-01-01

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