Ferroelectric Characteristics of Bi4-xLaxTi3O12 Thin Films Crystallized at Low Temperetures

Authors: Tanaka K.¹; Uno T.¹; Shimada Y.¹

Source: Integrated Ferroelectrics, Volume 46, Number 1, 1 January 2002 , pp. 285-294(10)

Publisher: Taylor and Francis Ltd

Key:

- Free Content

- New Content

- Subscribed Content

- Free Trial Content

Abstract:

Recently, Bi_4-xLa_xTi₃O₁₂ (BLT) has received much attention because it enables low crystallization temperature with a large remanent polarization. BLT films were prepared using a metal organic decomposition technique followed by a rapid thermal annealing (RTA) and a furnace annealing. The annealing of BLT was performed in the temperature range from 550 to 700°C. In particular, BLT film annealed at 600°C using the RTA tool and the furnace shows good ferroelectric characteristics. The BLT film annealed at 600°C exhibits a large value of remanent polarization (22

C/cm² at 250kV/cm), and a low leakage current density (7 × 10^-7 A/cm² at 250kV/cm), a good endurance characteristics for up to 3.2 × 10¹¹ cycles at 250kV/cm at 85°C. From an accelerated imprint test, the lifetime of hysteresis integrity is estimated to be over 10 years at 85°C. In conclusion, BLT is the one of the promising material to achieve the high density FeRAMs.

Keywords: lanthanum substituted bismuth titanate; Bi4-xLaxTi3O12; low temperature crystallization; endurance; imprint

Document Type: Research article

Affiliations: 1: Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 1-1 Saiwai-cho, Takatsuki, Osaka 569-1193, Japan

The full text electronic article is available for purchase. You will be able to download the full text electronic article after payment.

$45.09 plus tax Refund Policy