Preparation of SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

Authors: Nishioka Y.; Ishiwara H.1

Source: Integrated Ferroelectrics, Volume 46, Number 1, 1 January 2002 , pp. 265-274(10)

Publisher: Taylor and Francis Ltd

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Abstract:

Ferroelectric SrBi2Ta2O9 (SBT) thin films were deposited by RF magnetron sputtering on a Pt/Ti/SiO2/Si(100) structure. The deposition temperature of the film was varied from RT (room temperature) to 600°C. It was found that the SBT films were crystallized at temperatures between 500°C and 600°C, which was much lower than the annealing temperature (700°C to 800°C) of the RT-deposited film. The maximum remnant polarization value (2Pr) of the SBT film was 15 muC/cm2, which was deposited at 575°C.

Keywords: SBT; ferroelectric thin film; RF magnetron sputtering; low temperature crystallization

Document Type: Research article

Affiliations: 1: Frontier Collaborative Research Center Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JAPAN

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