Integrated Ferroelectrics

Preface
pp. ix-x(2)
Author: Shiosaki T.

Guest Editorial
pp. xi-xi(1)
Authors: Miyasaka Y.; Otsuki T.

Conference Committees and Sponsors
pp. xiii-xiii(1)

Thick Pb(Ni1/3Nb2/3)O3-(Pb1-x)(Ti1-yZry)O3 Films Prepared by Tape-Casting
pp. 3-15(13)
Authors: Hsieh K-C.; Tai N-H.; Shen Y-M.; Lin I-N.

Multi-Layer Ferroelectric Pb(Zr0.52Ti0.48)O3 Thick Films Prepared by Pulsed Laser Deposition
pp. 17-26(10)
Authors: Cheng H-F.; Lin C-S.; Lin I-N.

Physical Properties of (Pb,La)(Zr,Ti)O3 Films Crystallized by One-Step Postdeposition Annealing Using Nucleus-Insertion Method
pp. 27-35(9)
Authors: Wakabayashi R.; Kobune M.; Sawada T.; Kojima S.; Honda K.

Ferroelectricity of Rare Earth Eu Doped Sol-Gel Derived Pb(ZrxTi1-x)O3 Thin Films
pp. 37-45(9)
Authors: Yu Y.J.; Chan H.L.W.; Wang F.P.; Zhao L.C.; Choy C.L.

High Quality Ferroelectric Capacitor for FeRAM Applications
pp. 47-53(7)
Authors: Ren T-L.; Zhang L-T.; Wang X-N.; Wei C-G.; Liu J-S.; Liu L-T.; Li Z-J.

Low-Leakage Epitaxial PZT Thin Films Grown on Ir/MgO Substrates by Metalorganic Chemical Vapor Deposition
pp. 55-64(10)
Authors: Oikawa T.; Takahashi K.; Ishida J.; Ichikawa Y.; Ochiai T.; Saito K.; Sawabe A.; Funakubo H.

Uniformity of PZT Thin Films Prepared by MOCVD on 8" Substrate
pp. 65-77(13)
Authors: Masuda T.; Kajinuma M.; Yamada T.; Uchida H.; Uematsu M.; Suu K.; Ishikawa M.

Fabrication of (100) Orientated PZT Thin Films for MEMS Applications
pp. 79-86(8)
Authors: Zhao H-J.; Ren T-L.; Liu J-S.; Liu L-T.; Li Z-J.

Growth Stages of Sol-Gel Derived PZT(30/70) on Pt/Ti/SiO2 as Shown by SPM (PFM and Topography)
pp. 87-94(8)
Authors: Dunn S.; Zhang Q.; Whatmore R.W.

Effects of PbTiO3 Seed Layer on the Characteristics of RF-Sputtered Pb(Zr0.5,Ti0.5)O3 Thin Films
pp. 95-104(10)
Authors: Thomas R.; Mochizuki S.; Mihara T.; Ishida T.

Preparation of PLZT Ferroelectric Films by RF Sputtering on 200 mm Substrate
pp. 105-114(10)
Authors: Kikuchi S.; Miyaguchi Y.; Jimbo T.; Kimura I.; Tanimura M.; Suu K.; Ishikawa M.

Fabrication of Pb(Zr,Ti)O3 Thin Films by Liquid Delivery MOCVD Using a Cocktail Source with Pb(METHD)2, Zr(METHD)4 and Ti(MPD)(METHD)2
pp. 115-124(10)
Authors: Otani Y.; Abe N.; Ueda Y.; Miyake M.; Okamura S.; Shiosaki T.

Influence of Reactor Pressure on the Formation of PZT Thin Films by Liquid Delivery MOCVD
pp. 125-131(7)
Authors: Ueda Y.; Abe N.; Otani Y.; Miyake M.; Okamura S.; Shiosaki T.

Study of Thickness Dependence on Electrical Properties of (Pb,La)TiO3 Thin Films for Memory Applications
pp. 133-141(9)
Authors: Venkateswarlu P.; Victor P.; Krupanidhi S.B.

Alternating Current Conduction and Impedance Spectroscopy Analysis on Pulsed Excimer Laser Ablated (Pb, La)TiO3 Thin Films
pp. 143-152(10)
Authors: Venkateswarlu P.; Victor P.; Krupanidhi S.B.

Study of Relaxor Behavior of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Thin Films
pp. 153-162(10)
Authors: Laha A.; Victor P.; Krupanidhi S.B.

Low-Temperature Preparation of PbZrTiO3/TiNi/Si Heterostructures by Laser Annealing
pp. 163-173(11)
Authors: Pan H-C.; Tsai H-L.; Chou C-C.

Electrical Properties of PbSrTiO3 Films on Stainless Steel Substrates with LaSrMnO3 Buffer layers
pp. 175-184(10)
Authors: Pan H-C.; Sheng J-N.; Chou C-C.; Cheng H-F.

Microstructure and Electrical Properties of PZT Thin films Deposited by Laser Ablation on Template Layer
pp. 187-195(9)
Authors: Wang Z.J.; Karibe I.; Kokawa H.; Maeda R.

The Properties of Multi-Layered Pt/(Ba0.5Sr0.5)TiO3/Pb(Zr0.52Ti0.48)O3/(Ba0.5Sr0.5)TiO3/Pt Capacitors
pp. 197-204(8)
Authors: Yan F.; Bao P.; Zhu J.; Wang Y.

The Role of Bi2O3 Interfacial Layer in Improvement of Ferroelectric Properties of SrBi2Ta2O9 Thin Films Deposited by Liquid-Delivery MOCVD
pp. 205-214(10)
Authors: Seong N-J.; Shin W-C.; Choi E-S.; Ryoo S-N.; Yoon S-G.

Electrode Size Effect on Switching Time of SrBi2Ta2O9 Thin Films
pp. 215-220(6)
Authors: Chen X.; Yan F.; Li C.; Wu D.; Zhu J.; Wang Y.

Microstructural and Electrical Properties of (BaxSr1 - x)Ti1 + yO3 + z Thin Films Prepared by RF Magnetron Sputtering
pp. 221-232(12)
Authors: Baniecki J.D.; Shioga T.; Kurihara K.

Leakage Current Measurements of STO and BST Thin Films Interpreted by the "Dead" Layer Model
pp. 233-242(10)
Authors: Schmitz S.; Schroeder H.

High Frequency LIMM - A Powerful Tool for Ferroelectric Thin Film Characterization
pp. 243-257(15)
Authors: Sandner T.; Suchaneck G.; Koehler R.; Suchaneck A.; Gerlach G.

Characterization of Rhombohedral (111) and (100) Lead Zirconate Titanate Films Fabricated by RF Magnetron Sputtering
pp. 259-264(6)
Authors: Fujii T.; Adachi M.

Preparation of SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering
pp. 265-274(10)
Authors: Nishioka Y.; Ishiwara H.

Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition
pp. 275-284(10)
Authors: Lee W-J.; Shin W-C.; Chae B-G.; Ryu S-O.; You I-K.; Cho S.M.; Yu B-G.; Shin B-C.

Ferroelectric Characteristics of Bi4-xLaxTi3O12 Thin Films Crystallized at Low Temperetures
pp. 285-294(10)
Authors: Tanaka K.; Uno T.; Shimada Y.

Development of Materials Integration Strategies for Electroceramic Film-Based Devices Via Complementary In Situ and Ex Situ Studies of Film Growth and Interface Processes
pp. 295-306(12)
Authors: Auciello O.; Dhote A.M.; Ramesh R.; Liu B.T.; Aggarwal S.; Mueller A.H.; Suvarova N.A.; Irene E.A.

Ferroelectric Domain Structures in Epitaxial PZT Thin Films: A Review
pp. 307-328(22)
Authors: Lee K.; Lee K.S.; Kim Y.K.; Baik S.

Crystallization of Zirconium-Rich PLZT Thin Films Below 500°C
pp. 329-338(10)
Authors: Mandeljc M.; Mali B.; Kosec M.; Drai G.