Investigating the Dielectric Property of Abnormal Grain Growth Hexagonal BaTiO3

In this work, the structural and dielectric properties of hexagonal BaTiO3 have been investigated. The samples are partially doped with Ga3+ at Ti site to stabilize the hexagonal structure at room temperature. The abnormal grain growth (AGG) is observed on h-BaTi1 - xGaxO3 samples at a higher sintering temperature. The Qxf values can be improved by Ga-doping in BaTiO3. By the evanescent microwave microscope scanning probe technology (EMP), it is found that the regions of the abnormal growth grains have the higher K-value than that of the normal growth grains. The K-value and Qxf value can be concurrently enhanced of the h-BaTi1 - xGaxO3 samples with AGG have been reported.