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Influence of Bi Excess on Electrical Properties of Bi 3.25 + x La 0.75 Ti 3 O 12+ Thin Films

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Abstract:

The Bi-excess Bi 3.25+ x La 0.75 Ti 3 O 12+ (x = 0, 0.05, 0.10, 0.15, 0.20, BLT) thin films were prepared by pulsed laser deposition. Single phases of BLT thin films was confirmed by X-ray diffraction. For the small Bi-excess BLT films, ferroelectric properties are improved. One of them, 10 mol% Bi-excess BLT films exhibits high remanent polarization, low leakage current density, and improved switching polarization. Influence of Bi excess on ferroelectric and electrical properties are investigated by ferroelectric P-E hysteresis loops, transient current, and leakage current.

Keywords: BLT; PLD; ferroelectric thin film; leakage current

Document Type: Research Article

DOI: https://doi.org/10.1080/00150190500311458

Affiliations: 1: Department of Physics, University of Ulsan, Ulsan, 680-749, Korea 2: Department of Physics, Pukyong National University, Busan, 608-737, Korea

Publication date: 2005-01-01

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