A review of direct metamorphic In x Ga 1− x As and InP epilayers on GaAs substrates by MOCVD

Authors: Yarn, Kao-Feng¹; Liao, Chin-I²; Lin, Chien-Lien²

Source: Crystallography Reviews, Volume 12, Number 1, January-March 2006 , pp. 47-80(34)

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Abstract:

This is a review of direct growing high-quality In x Ga 1− x As or InP buffer layers on GaAs substrates by metal-organic chemical vapour deposition (MOCVD). This low-temperature growth method benefits the improvement of metamorphic device performance. A simple and novel method of directly depositing thin In x Ga 1− x As or InP buffer layers ( + -GaAs structure is investigated to check the film quality. A distinguished I-V characteristic with cut-in voltage of 0.23V and reverse breakdown of 3V, corresponding to the electric field of 2×10 5 Vcm −1 , is also achieved. The superior results are mainly due to the use of low-temperature growth technology. In addition, we also found this growth technology is available to directly grow the InP buffer layers on GaAs. Experimental results conclude that the growth temperature of 480°C in harmony with the V/III ratio range of 130-210 is a suitable window to directly grow InP on GaAs substrates.

Keywords: Metamorphic epilayers; MOCVD; Transistors

Document Type: Research article

DOI: http://dx.doi.org/10.1080/08893110600664965

Affiliations: 1: Department of Electronic Engineering, Far East College, Hsin-Shih, Tainan, Taiwan 744, ROC 2: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC

Publication date: 2006-01-01

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