Ohmic Contacts for Compound Semiconductors

Authors: Murakami, Masanori; Koide, Yasuo

Source: Critical Reviews in Solid State and Material Sciences, Volume 23, Number 1, March 1998 , pp. 1-60(60)

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Abstract:

Although there has been strong demand for low -resistance, highly reliable Ohmic contacts for compound semiconductors to realize high-frequency transistors, high-power devices, and light-emitting (LED) and laser diodes (LD), development of the Ohmic contact technologies has been made on a trial-and-error basis. The primary reason is lack of fundamental data to design ideal metal/semiconductor interfaces due to complexity of elements involved at the interfacial reaction. In this article, we review recent systematic studies carried out for Ohmic contact materials to n-GaAs and then address critical issues to apply the methodology established in n-GaAs to develop low-resistance Ohmic contacts for p-ZnSe and p-GaN, which are desperate for blue-green LED and LD.

Keywords: ohmic contact; compound semiconductor

Document Type: Research article

DOI: http://dx.doi.org/10.1080/10408439891324167

Affiliations: 1: Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan

Publication date: 1998-03-01