Advanced Oxidation Processes in the Removal of Organics From Silicon Surfaces in IC Manufacturing: Theoretical Concepts

Authors: F. De Smedt; H. Vankerckhoven; C. Vinckier

Source: Ozone: Science and Engineering, Volume 25, Number 5, October 2003 , pp. 445-451(7)

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Abstract:

Ozone is considered an environmentally friendly alternative for currently applied H₂SO₄-based mixtures in the cleaning of semiconductor devices. In order implement ozone/water cleaning processes in practical systems, functional research is needed to understand the underlying chemical processes. Related to the removal of organic contamination from silicon surface, one needs to know whether ozone or radical species are the most efficient. A kinetic modeling study is performed to solve this problem whereby the pH is varied and different additives are checked. Theoretical concepts as Dominant Oxidation Pathway (DOP) and Radical Pool (RP) will be introduced for the evaluation of the various reaction pathways.

Keywords: Ozone; Organics; Semiconductors; Advanced Oxidation Processes; Radicals; Dominant Oxidant Pathway; Radical Pool

Document Type: Research article

DOI: http://dx.doi.org/10.1080/01919510390481766

Affiliations: 1: Department of Chemistry, K.U. Leuven, Celestijnenlan 200F, 3001 Leuven, Belgium,/327992, frank.desmedt@chem.kuleuven.ac.be, Fax: 016

Publication date: 2003-10-01