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Photoionization Spectrum Measurement and Analysis of Deep Level in GaN Epilayers

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Photoionization spectrum measurement method was designed based on constant photocurrent control by PID technology. Combined with photocurrent and hall effect measurements, this method can provide exact photoionization cross section in GaN epilayers. The measurement results of GaN epilayers show that, the responsiveness of photoelectric detector is the dominating factor affecting test accuracy. The test error increases with the incident photon energy. An 8% test error can be produced under incident photon with 3.2 eV photon energy. Deep level trap in GaN epilayers can still absorb photons with incident energy less than the energy difference between deep level trap and conductor band(2.85 eV), which implies that the lattice relaxation associated with deep level trap takes places in GaN epilayers.
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Keywords: Deep level; GaN; Lattice relaxation; Photoionization spectrum

Document Type: Research Article

Publication date: 01 August 2010

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  • Spectroscopy and Spectral Analysis, founded in 1981, is sponsored by the Chinese Central Iron & Steel Research Institute. "Spectroscopy and Spectral Analysis" has been indexed in SCI(1999), Ei(1992), MEDLINE(1999), and AJ (1999). "Spectroscopy and Spectral Analysis" publishes original contributions on various fields in Spectroscopy, including research results on laser spectroscopy, IR, Ramn, UV/Vis, Optical Emission, Absorption and Fluorescence spectroscopy, X-ray Fluorescence, and Spectrochemical Analysis, as well as Reseach paper, Research notes, Experimental Technique and Instrument, Review and Progress on the latest development of spectroscopy and spectrochemical anlysis, etc. "Spectroscopy and Spectral Analysis" is published monthly by Peking University Press with book sizes of large 16-mo format , and 292 pages per issue.
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