Link Between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation

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We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiHx (x = 1‐3), OySiH (y = 1‐2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O2SiH band amplitude.

Keywords: Correlation; Infrared spectroscopy; Ozone; Photoluminescence; Porous silicon

Document Type: Research Article


Affiliations: Department of Chemistry, Natural Sciences Complex, University at Buffalo, The State University of New York, Buffalo, NY 14260-3000 USA

Publication date: August 1, 2012

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