Stress Characterization of Si by Near-Field Raman Microscope Using Resonant Scattering

$29.00 plus tax (Refund Policy)

Buy Article:

Abstract:

We have developed a tapping-mode scanning near-field optical Raman microscope (SNORM) with a caved and pyramidical probe, using resonant Raman scattering, and have measured the stress distribution of Si. The peak frequency shifts to a lower frequency by 0–0.5 cm−1 in the area covered by silicon dioxide, whereas it shifts to a higher frequency by 0–0.3 cm−1 in the area uncovered by silicon dioxide, showing that the areas covered and uncovered by silicon dioxide are under tensile and compressive stresses, respectively. It has been found that compressive stresses of about 0.69 GPa/cm2 are concentrated on the corner of the area uncovered by silicon dioxide. The comparison of stress distributions measured with and without the cantilever shows that the SNORM we developed has a spatial resolution of at least less than 250 nm.

Keywords: NANOMETER; NEAR FIELD; RAMAN SPECTROSCOPY; RESONANT RAMAN SCATTERING; SI; STRESS

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/000370206777412130

Affiliations: Toray Research Center Inc., Sonoyama 3-3-7, Otsu, Shiga 520-8567, Japan

Publication date: May 1, 2006

More about this publication?
Related content

Tools

Favourites

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more