Monitoring Dielectric Thin-Film Production on Product Wafers Using Infrared Emission Spectroscopy
Abstract:Monitoring of dielectric thin-film production in the microelectronics industry is generally accomplished by depositing a representative film on a monitor wafer and determining the film properties off line. One of the most important dielectric thin films in the manufacture of integrated circuits is borophosphosilicate glass (BPSG). The critical properties of BPSG thin films are the boron content, phosphorus content, and film thickness. We have completed an experimental study that demonstrates that infrared emission spectroscopy coupled with multivariate analysis can be used to simultaneously determine these properties directly from the spectra of product wafers, thus eliminating the need for producing monitor wafers. In addition, infrared emission data can be used to simultaneously determine the film temperature, which is an important film production parameter. The infrared data required to make these determinations can be collected on a time scale that is much faster than the film deposition time, hence infrared emission is an ideal candidate for an in situ process monitor for dielectric thin-film production.
Document Type: Research Article
Publication date: August 1, 2001
More about this publication?
- The Society publishes the internationally recognized, peer reviewed journal, Applied Spectroscopy, which is available both in print and online. Subscriptions are included with membership or can be purchased by institutional or corporate organizations. Abstracts may be viewed free of charge. Previously published as Bulletin (Society for Applied Spectroscopy)
- Editorial Board
- Information for Authors
- Submit a Paper
- Subscribe to this Title
- Membership Information
- Request copyrighted SAS materials
- Spectroscopic Nomenclature
- Focal Point (Open Access)
- ingentaconnect is not responsible for the content or availability of external websites